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TPS1120D价格
参考价格：￥7.0274
型号：TPS1120D 品牌：TI 备注：这里有TPS1120D多少钱，2026年最近7天走势，今日出价，今日竞价，TPS1120D批发/采购报价，TPS1120D行情走势销售排行榜，TPS1120D报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TPS1120D | 丝印代码：1120；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have | TI 德州仪器 |   | |
TPS1120D | DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS 文件：180.25 Kbytes Page：12 Pages | TI 德州仪器 | | |
TPS1120D | DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS 文件：379.72 Kbytes Page：15 Pages | TI 德州仪器 | | |
丝印代码：1120；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have | TI 德州仪器 | | ||
丝印代码：1120；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have | TI 德州仪器 | | ||
丝印代码：1120；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have | TI 德州仪器 | | ||
丝印代码：1120；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have | TI 德州仪器 | | ||
丝印代码：1120；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have | TI 德州仪器 | | ||
丝印代码：1120；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have | TI 德州仪器 | | ||
丝印代码：1120；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have | TI 德州仪器 | | ||
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS 文件：379.72 Kbytes Page：15 Pages | TI 德州仪器 | | ||
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS 文件：379.72 Kbytes Page：15 Pages | TI 德州仪器 | | ||
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS 文件：379.72 Kbytes Page：15 Pages | TI 德州仪器 | | ||
Dual P-Channel 30-V (D-S) MOSFET 文件：1.8865 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS 文件：180.25 Kbytes Page：12 Pages | TI 德州仪器 | | ||
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR??? General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime | POLYFET | | ||
Optocoupler with Phototransistor Output Description The TCDT1120(G) series consists of a phototransis tor optically coupled to a gallium arsenide infrared emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output fo | VISHAYVishay Siliconix 威世威世科技公司 | | ||
P-Channel Enhancement-Mode Vertical DMOS Power FETs??? P-Channel Enhancement-Mode Vertical DMOS Power FETs Applications □ Motor controls □ Converters □ Amplifiers □ Switches □ Power supply circuits □ Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS Power FETs??? 文件：136.07 Kbytes Page：4 Pages | SUTEX | |
TPS1120D产品属性
- 类型
描述
- 型号
TPS1120D
- 功能描述
MOSFET Dual P-Ch Enh-Mode MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
2016+ |
SOP8 |
2342 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
TI/德州仪器 |
25+ |
SOP-8 |
12496 |
TI/德州仪器原装正品TPS1120DR即刻询购立享优惠#长期有货 |
|||
TI(德州仪器) |
24+/25+ |
10000 |
原装正品现货库存价优 |
||||
TI/德州仪器 |
24+ |
SOP |
9890 |
只供应原装正品 欢迎询价 |
|||
TI |
25+ |
SOP8 |
2490 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
TI/德州仪器 |
25+ |
SOP-8 |
2342 |
全新原装正品支持含税 |
|||
TI |
23+ |
SOP-8 |
3600 |
原装正品假一罚百!可开增票! |
|||
TI(德州仪器) |
23+ |
SOIC-8 |
13650 |
公司只做原装正品,假一赔十 |
|||
TI(德州仪器) |
2450+ |
SMD |
9850 |
只做原装正品代理渠道!假一赔三! |
|||
TexasInstruments |
24+ |
NA |
3000 |
进口原装正品优势供应 |
TPS1120D规格书下载地址
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DdatasheetPDF页码索引
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