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IS41价格

参考价格：￥5.0436

型号：IS410-4-XP 品牌：Marathon/Kulka 备注：这里有IS41多少钱，2026年最近7天走势，今日出价，今日竞价，IS41批发/采购报价，IS41行情走势销售排行榜，IS41报价。

型号	功能描述	生产厂家企业	LOGO
IS410	Lead-free Epoxy Laminate and Prepreg PRODUCT FEATURES Industry Recognition UL File Number: E41625 RoHS Compliant Performance Attributes Lead-free assembly compatible 6x 288°C solder float capable Processing Advantages FR-4 process compatible	ISOLA	ISOLA
IS41C16100	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半导体	ISSI
IS41C16100-50K	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半导体	ISSI
IS41C16100-50KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半导体	ISSI
IS41C16100-50T	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半导体	ISSI
IS41C16100-50TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半导体	ISSI
IS41C16100-60K	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半导体	ISSI
IS41C16100-60KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半导体	ISSI
IS41C16100-60T	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半导体	ISSI
IS41C16100-60TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半导体	ISSI
IS41C16100C	16Mb DRAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100CandIS41LV16100Care1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer a cycle access called Extended Data Out (EDO) Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 3	ISSI 矽成半导体	ISSI
IS41C16100S	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-45K	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-45KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-45T	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-45TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-50K	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-50KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-50T	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-50TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-60K	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-60KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-60T	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-60TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16105	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半导体	ISSI
IS41C16105	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IS41C16105-50K	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半导体	ISSI
IS41C16105-50K	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IS41C16105-50KE	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半导体	ISSI
IS41C16105-50KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IS41C16105-50KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半导体	ISSI
IS41C16105-50T	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半导体	ISSI
IS41C16105-50T	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IS41C16105-50TE	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半导体	ISSI
IS41C16105-50TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半导体	ISSI
IS41C16105-50TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IS41C16105-60K	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半导体	ISSI
IS41C16105-60K	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IS41C16105-60KE	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半导体	ISSI
IS41C16105-60KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半导体	ISSI
IS41C16105-60KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IS41C16105-60T	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半导体	ISSI
IS41C16105-60T	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IS41C16105-60TE	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半导体	ISSI
IS41C16105-60TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ISSI 矽成半导体	ISSI
IS41C16105-60TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IS41C16105C	16Mb DRAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105C and IS41LV16105C are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. It is asynchronous, as it does not require a clo	ISSI 矽成半导体	ISSI
IS41C16128	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半导体	ISSI
IS41C16128-35K	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半导体	ISSI
IS41C16128-35KI	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半导体	ISSI
IS41C16128-35T	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半导体	ISSI
IS41C16128-35TI	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半导体	ISSI
IS41C16128-40K	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半导体	ISSI
IS41C16128-40KI	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半导体	ISSI
IS41C16128-40T	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半导体	ISSI
IS41C16128-40TI	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半导体	ISSI
IS41C16128-45K	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半导体	ISSI
IS41C16128-45KI	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半导体	ISSI
IS41C16128-45T	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半导体	ISSI
IS41C16128-45TI	128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. T	ISSI 矽成半导体	ISSI

IS41产品属性

类型
描述
型号
IS41
制造商
IDEC Corporation
功能描述
SENS.IND. 10-30VDC NPN NO

IS41供应商更多...

更新时间：2026-1-27 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科芯源微电子有限公司	IS4100	ISOCOM	2026+	SOP16	65248	百分百原装现货实单必成	询价
深圳市星宇佳科技有限公司	IS416A-2ZLI	ISSI	1112PB	MSOP8	750		询价
深圳市豪迈兴电子有限公司	IS41C16100-50K	ISSI	24+	SOJ	5825	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
芯有半导体（深圳）有限公司	IS41C16100-50K	INTEGRATEDSI	05+	原厂原装	4230	只做全新原装真实现货供应	询价
标准国际(香港)有限公司	IS41C16100-50K	ISSI	25+		13	公司优势库存热卖中!!	询价
谛辉(北京/上海/青岛 )电子科技有限公司	IS416A-2ZI	ISSI	25+	MSOP8	18000	原厂直接发货进口原装	询价
深圳市恒达亿科技有限公司	IS41C16100-50K	ISSI	25+	SOJ	3000	全新原装、诚信经营、公司现货销售	询价
深圳市胜彬电子有限公司	IS4128-3GI	ISSI	22+	SOP	8000	原装正品支持实单	询价
深圳市一线半导体有限公司	IS416A-2ZI	ISSI	24+	MSOP8	1182		询价
深圳市美思瑞电子科技有限公司	IS41C16100-50K	ICSI	22+	SOJ	12245	现货,原厂原装假一罚十!	询价

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IS41参数引脚图相关

IS41数据表相关新闻

IS42S16100H-6TL
IS42S16100H-6TL
2023-5-11
IS31AP2005-SLS2-TR
IS31AP2005-SLS2-TR
2022-12-16
IS32LT3957A-ZLA3-TR ISSI eTSSOP-16 21+ 30K
IS32LT3957A-ZLA3-TR ISSI eTSSOP-16 21+ 30K
2022-3-31
IS31FL3218-QFLS2-TR
IS31FL3218-QFLS2-TR
2021-10-11
IS42S16100E-7TL公司大量原装正品现货/长期供应
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-5-8
IS42S16100C1-7T公司大量原装正品现货/长期供应
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-5-8

DdatasheetPDF页码索引

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IS41参数引脚图相关

IS41数据表相关新闻

IS42S16100H-6TL

IS31AP2005-SLS2-TR

IS32LT3957A-ZLA3-TR ISSI eTSSOP-16 21+ 30K

IS31FL3218-QFLS2-TR

IS42S16100E-7TL公司大量原装正品现货/长期供应

IS42S16100C1-7T公司大量原装正品现货/长期供应

DdatasheetPDF页码索引