DESCRIPTION

TheISSIIS41C16100CandIS41LV16100Care1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer a cycle access called Extended Data Out (EDO) Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 30 ns per 16-bit word. It is asynchronous, as it does not require a clock signal input to synchronize commands and I/O.

FEATURES

• TTL compatible inputs and outputs; tristate I/O

• Refresh Interval:

—  Auto refresh Mode: 1,024 cycles /16 ms

—  RAS-Only, CAS-before-RAS (CBR), and Hidden

— Self refresh Mode: 1,024 cycles /128 ms

• JEDEC standard pinout

• Single power supply:

5V ± 10 (IS41C16100C)

3.3V ± 10 (IS41LV16100C)

• Byte Write and Byte Read operation via two CAS

• Industrial Temperature Range: -40°C to +85°C