型号 功能描述 生产厂家 企业 LOGO 操作
IS41C16100-60K

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

ISSI

矽成半导体

IS41C16100-60K

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:169.53 Kbytes Page:23 Pages

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:169.53 Kbytes Page:23 Pages

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:169.53 Kbytes Page:23 Pages

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:169.53 Kbytes Page:23 Pages

ISSI

矽成半导体

IS41C16100-60K产品属性

  • 类型

    描述

  • 型号

    IS41C16100-60K

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

更新时间:2026-1-30 19:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
26+
QFN
890000
一级总代理商原厂原装大批量现货 一站式服务
ISSI
25+
16
公司优势库存 热卖中!!
ISSI
2015+
DIP/SMD
19889
一级代理原装现货,特价热卖!
ISSI
2023+
SOJ
53500
正品,原装现货
INTEGRATEDS
23+
原厂封装
9888
专做原装正品,假一罚百!
IR
24+
DIP
13718
只做原装 公司现货库存
ISSI
22+
SOJ-42
5000
只做原装鄙视假货15118075546
ISSI
2026+
PLCC
11088
只做原厂原装,认准宝芯创配单专家
ICS
22+
SOJ-42
8000
原装正品支持实单
ISSI
23+
SOJ
6000
原装正品假一罚百!可开增票!

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