型号 功能描述 生产厂家 企业 LOGO 操作
IS41C16105-50KE

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,

ISSI

矽成半导体

1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

[ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower

ETCList of Unclassifed Manufacturers

未分类制造商

1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

[ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower

ETCList of Unclassifed Manufacturers

未分类制造商

1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

[ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower

ETCList of Unclassifed Manufacturers

未分类制造商

1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

[ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower

ETCList of Unclassifed Manufacturers

未分类制造商

IS41C16105-50KE产品属性

  • 类型

    描述

  • 型号

    IS41C16105-50KE

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    1M x 16(16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

更新时间:2025-11-21 9:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
25+
SOJ
3000
全新原装、诚信经营、公司现货销售
ISSI
23+
TSOP44
55229
##公司主营品牌长期供应100%原装现货可含税提供技术
ISSI
2025+
TSOP
3587
全新原厂原装产品、公司现货销售
ISSI
20+
SOJ
35830
原装优势主营型号-可开原型号增税票
ISSI
23+
TSOP44
6000
原装正品假一罚百!可开增票!
ISSI
2015+
DIP/SMD
19889
一级代理原装现货,特价热卖!
ISSI
24+
TSOP44
9600
原装现货,优势供应,支持实单!
ISSI
23+
SOJ
7000
ISSI
21+
SOJ
10000
原装现货假一罚十
ISSI
21+
TSOP44
1709

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