IS41C16100集成电路资料批发采购价格ISSI-IC资料网

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IS41C16100价格

参考价格：￥31.7983

型号：IS41C16100C-50KLI 品牌：ISSI 备注：这里有IS41C16100多少钱，2025年最近7天走势，今日出价，今日竞价，IS41C16100批发/采购报价，IS41C16100行情走势销售排行榜，IS41C16100报价。

型号	功能描述	生产厂家企业	LOGO
IS41C16100	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半导体	ISSI
IS41C16100	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：169.53 Kbytes Page：23 Pages	ISSI 矽成半导体	ISSI
IS41C16100	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE	ISSI 矽成半导体	ISSI
IS41C16100-50K	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半导体	ISSI
IS41C16100-50KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半导体	ISSI
IS41C16100-50T	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半导体	ISSI
IS41C16100-50TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半导体	ISSI
IS41C16100-60K	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半导体	ISSI
IS41C16100-60KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半导体	ISSI
IS41C16100-60T	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半导体	ISSI
IS41C16100-60TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20	ISSI 矽成半导体	ISSI
IS41C16100C	16Mb DRAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100CandIS41LV16100Care1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer a cycle access called Extended Data Out (EDO) Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 3	ISSI 矽成半导体	ISSI
IS41C16100S	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-45K	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-45KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-45T	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-45TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-50K	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-50KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-50T	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-50TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-60K	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-60KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-60T	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100S-60TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as	ICSI	ICSI
IS41C16100_05	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：169.53 Kbytes Page：23 Pages	ISSI 矽成半导体	ISSI
IS41C16100-50K	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：169.53 Kbytes Page：23 Pages	ISSI 矽成半导体	ISSI
IS41C16100-50KE	5V 1M x 16(16-MBIT) dynamic RAM with edo page mode	ISSI 矽成半导体	ISSI
IS41C16100-50KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：169.53 Kbytes Page：23 Pages	ISSI 矽成半导体	ISSI
IS41C16100-50KL	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：169.53 Kbytes Page：23 Pages	ISSI 矽成半导体	ISSI
IS41C16100-50KLI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：169.53 Kbytes Page：23 Pages	ISSI 矽成半导体	ISSI
IS41C16100-50T	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：169.53 Kbytes Page：23 Pages	ISSI 矽成半导体	ISSI
IS41C16100-50TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：169.53 Kbytes Page：23 Pages	ISSI 矽成半导体	ISSI
IS41C16100-50TL	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：169.53 Kbytes Page：23 Pages	ISSI 矽成半导体	ISSI
IS41C16100-50TLI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：169.53 Kbytes Page：23 Pages	ISSI 矽成半导体	ISSI
IS41C16100-60K	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：169.53 Kbytes Page：23 Pages	ISSI 矽成半导体	ISSI
IS41C16100-60KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：169.53 Kbytes Page：23 Pages	ISSI 矽成半导体	ISSI
IS41C16100-60KL	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：169.53 Kbytes Page：23 Pages	ISSI 矽成半导体	ISSI
IS41C16100-60KLI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：169.53 Kbytes Page：23 Pages	ISSI 矽成半导体	ISSI
IS41C16100-60T	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：169.53 Kbytes Page：23 Pages	ISSI 矽成半导体	ISSI
IS41C16100-60TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：169.53 Kbytes Page：23 Pages	ISSI 矽成半导体	ISSI
IS41C16100-60TL	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：169.53 Kbytes Page：23 Pages	ISSI 矽成半导体	ISSI
IS41C16100-60TLI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：169.53 Kbytes Page：23 Pages	ISSI 矽成半导体	ISSI
IS41C16100C-50KLI-TR	封装/外壳：42-BSOJ（0.400"，10.16mm 宽）包装：卷带（TR）描述：IC DRAM 16MBIT PARALLEL 42SOJ 集成电路（IC）存储器	ETC 知名厂家	ETC
IS41C16100C-50TI	封装/外壳：50-TSOP（0.400"，10.16mm 宽），44 引线包装：卷带（TR）描述：IC DRAM 16MBIT PAR 50TSOP II 集成电路（IC）存储器	ETC 知名厂家	ETC
IS41C16100S-45K	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE	ISSI 矽成半导体	ISSI
IC41C16100A	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IC41C16100A(S) and IC41LV16100A(S) are 1,048, 576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as shor	ICSI	ICSI
IC41C16100AS	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IC41C16100A(S) and IC41LV16100A(S) are 1,048, 576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as shor	ICSI	ICSI
IC41C16100S	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI

IS41C16100产品属性

类型
描述
型号
IS41C16100
制造商
ISSI
制造商全称
Integrated Silicon Solution, Inc
功能描述
1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

IS41C16100供应商更多...

更新时间：2025-10-3 12:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市亿智腾科技有限公司	IS41C16100C-50KLI	ISSI/矽成	832	DRAM / 1MX16 EDO / SOJ-42 / 50	2019		询价
深圳市中联芯电子有限公司	IS41C16100C-50TLI-TR	ISSI	24+	TSOP50	9000	只做原装正品有挂有货假一赔十	询价
深圳市宇创芯科技有限公司	IS41C16100S-50K	ICSI	24+	SOJ	9600	原装现货,优势供应,支持实单!	询价
深圳市坤融电子科技有限公司	IS41C16100C-50KLI	ISSI	24+	SOJ42	5000	原厂授权代理价格绝对优势	询价
贸泽芯城（深圳）电子科技有限公司	IS41C16100S-50S	专业ISSI	23+	TSOP	4709	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市纳立科技有限公司	IS41C16100C-50TI	ISSI	三年内		1983	只做原装正品	询价
深圳市明嘉莱科技有限公司	IS41C16100C-50KLI	ISSI	25+	SOJ42	880000	明嘉莱只做原装正品现货	询价
深圳市能元时代电子有限公司	IS41C16100S-50K	ICSI	23+	DIP	55227	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳市百诺芯科技有限公司	IS41C16100C-50KLI	ISSI	23+	SOJ24	24981	原装正品代理渠道价格优势	询价
艾睿（深圳）半导体有限公司	IS41C16100S-50K	ISSI	2447	SOJ	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价

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IS41C16100价格

IS41C16100产品属性

IS41C16100供应商更多...

IS41C16100芯片相关品牌

IS41C16100规格书下载地址

IS41C16100参数引脚图相关

IS41C16100数据表相关新闻

IS42S16100H-6TL

IS31AP2005-SLS2-TR

IS32LT3957A-ZLA3-TR ISSI eTSSOP-16 21+ 30K

IS31FL3218-QFLS2-TR

IS42S16100E-7TL公司大量原装正品现货/长期供应

IS42S16100C1-7T公司大量原装正品现货/长期供应

DdatasheetPDF页码索引