位置:IS41C16105-60T > IS41C16105-60T详情

IS41C16105-60T中文资料

厂家型号

IS41C16105-60T

文件大小

523.179Kbytes

页面数量

18

功能描述

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

1M x 16(16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

数据手册

下载地址一下载地址二

生产厂商

ICSI

IS41C16105-60T数据手册规格书PDF详情

DESCRIPTION

The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41C16105 ideal for use in 16-, 32-bit wide data bus systems.

These features make the IS41C16105 and IS41LV16105 ideally suited for high-bandwidth graphics, digital signal processing, high performance computing systems, and peripheral applications.

The IS41C16105 and IS41LV16105 are packaged in a 42-pin 400-mil SOJ and 400-mil 44- (50-) pin TSOP (Type II).

FEATURES

• TTL compatible inputs and outputs; tristate I/O

• Refresh Interval: 1,024 cycles/16 ms

• Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden

• JEDEC standard pinout

• Single power supply:

5V ± 10 (IS41C16105)

3.3V ± 10 (IS41LV16105)

• Byte Write and Byte Read operation via two CAS

• Industrail temperature range -40°C to 85°C

IS41C16105-60T产品属性

  • 类型

    描述

  • 型号

    IS41C16105-60T

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    1M x 16(16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

更新时间:2025-10-12 14:14:00
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