位置:IS41C16100-50T > IS41C16100-50T详情

IS41C16100-50T中文资料

厂家型号

IS41C16100-50T

文件大小

123.63Kbytes

页面数量

20

功能描述

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

数据手册

下载地址一下载地址二

生产厂商

ISSI

IS41C16100-50T数据手册规格书PDF详情

DESCRIPTION

The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.

The Byte Write control, of upper and lower byte, makes the IS41C16100 ideal for use in 16-bit and 32-bit wide data bus systems.

FEATURES

• TTL compatible inputs and outputs; tristate I/O

• Refresh Interval:

— Auto refresh Mode: 1,024 cycles /16 ms

— RAS-Only, CAS-before-RAS (CBR), and Hidden

— Self refresh Mode - 1,024 cycles / 128ms

• JEDEC standard pinout

• Single power supply:

— 5V ± 10 (IS41C16100)

— 3.3V ± 10 (IS41LV16100)

• Byte Write and Byte Read operation via two CAS

• Industrail Temperature Range -40oC to 85oC

• Lead-free available

IS41C16100-50T产品属性

  • 类型

    描述

  • 型号

    IS41C16100-50T

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

更新时间:2025-10-13 10:50:00
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