位置：首页 > IC中文资料第5484页 > IS41C16105-60KI
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS41C16105-60KI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, | ISSI 矽成半导体 |   | |
IS41C16105-60KI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, | ICSI | | |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, | ISSI 矽成半导体 | | ||
1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE [ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE [ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE [ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE [ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower | ETCList of Unclassifed Manufacturers 未分类制造商 | |
IS41C16105-60KI产品属性
- 类型
描述
- 型号
IS41C16105-60KI
- 制造商
ISSI
- 制造商全称
Integrated Silicon Solution, Inc
- 功能描述
1M x 16(16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
24+ |
NA/ |
24 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ISSI |
22+ |
SOJ |
8000 |
原装正品支持实单 |
|||
ISSI |
23+ |
TSOP44 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ISSI |
24+ |
SOJ |
1 |
||||
ISSI |
22+ |
TSOP |
5660 |
现货,原厂原装假一罚十! |
|||
ISSI |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ISSI |
1824+ |
TSOP-42 |
2950 |
原装现货专业代理,可以代拷程序 |
|||
ISSI |
24+ |
SOJ |
6000 |
全新原装,一手货源,全场热卖! |
|||
ISSI |
24+ |
SOJ |
6000 |
只做原装，欢迎询价，量大价优 |
|||
ISSI |
20+ |
SOJ |
35830 |
原装优势主营型号-可开原型号增税票 |
IS41C16105-60KI芯片相关品牌
IS41C16105-60KI规格书下载地址
IS41C16105-60KI参数引脚图相关
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IS41C16105-60KI数据表相关新闻
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2019-5-8
DdatasheetPDF页码索引
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