型号 功能描述 生产厂家 企业 LOGO 操作
IS41C16105-60K

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,

ISSI

矽成半导体

IS41C16105-60K

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,

ICSI

1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

[ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower

ETCList of Unclassifed Manufacturers

未分类制造商

1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

[ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower

ETCList of Unclassifed Manufacturers

未分类制造商

1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

[ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower

ETCList of Unclassifed Manufacturers

未分类制造商

1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

[ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower

ETCList of Unclassifed Manufacturers

未分类制造商

IS41C16105-60K产品属性

  • 类型

    描述

  • 型号

    IS41C16105-60K

  • 制造商

    ICSI

  • 制造商全称

    Integrated Circuit Solution Inc

  • 功能描述

    1M x 16(16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

更新时间:2025-11-20 18:56:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
xilinx
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SOJ
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35830
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原装优势!绝对公司现货!
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9800
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2000
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1
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23+
333
专做原装正品,假一罚百!
ISSI
24+
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2000
只做原装正品现货 欢迎来电查询15919825718
ISSI
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SOP/DIP
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一级代理原装现货,特价热卖!
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SOJ42
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SOJ
1

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