型号 功能描述 生产厂家 企业 LOGO 操作
IS41C16105-60K

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,

ISSI

矽成半导体

IS41C16105-60K

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,

ICSI

1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

[ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower

ETCList of Unclassifed Manufacturers

未分类制造商

1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

[ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower

ETCList of Unclassifed Manufacturers

未分类制造商

1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

[ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower

ETCList of Unclassifed Manufacturers

未分类制造商

1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

[ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower

ETCList of Unclassifed Manufacturers

未分类制造商

IS41C16105-60K产品属性

  • 类型

    描述

  • 型号

    IS41C16105-60K

  • 制造商

    ICSI

  • 制造商全称

    Integrated Circuit Solution Inc

  • 功能描述

    1M x 16(16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

更新时间:2026-1-31 18:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
0102+
SOJ
168
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ISSI
2015+
DIP/SMD
19889
一级代理原装现货,特价热卖!
ISSI
2000
SOJ
1
原装现货支持BOM配单服务
ISSI
20+
SOJ
35830
原装优势主营型号-可开原型号增税票
ISSI
23+
333
专做原装正品,假一罚百!
ISSI
22+
SOJ
8000
原装正品支持实单
ISSI
24+
SOJ
1
ISSI
26+
QFN
890000
一级总代理商原厂原装大批量现货 一站式服务
ISSI
22+
SOJ
20000
公司只做原装 品质保障
xilinx
22+
SOJ
6800

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