型号 功能描述 生产厂家 企业 LOGO 操作
IS41C16100S-50K

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2

ICSI

IS41C16100S-50K产品属性

  • 类型

    描述

  • 型号

    IS41C16100S-50K

  • 制造商

    ICSI

  • 制造商全称

    Integrated Circuit Solution Inc

  • 功能描述

    1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

更新时间:2025-10-3 13:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SI
24+
PLCC
7671
原装正品.优势专营
ICSI
24+
SOJ
9600
原装现货,优势供应,支持实单!
SI
25+
PLCC
880000
明嘉莱只做原装正品现货
ICSI
23+
SOJ
8000
只做原装现货
ISSI
2447
SOJ
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ICSI 
23+
DIP
55227
##公司主营品牌长期供应100%原装现货可含税提供技术
ICSI
24+
SOJ
6000
全新原装,一手货源,全场热卖!
ICSI
23+
SOJ-42
50000
全新原装正品现货,支持订货
24+
SOJ
170
ISSI
2023+
SOJ
50000
原装现货

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