型号 功能描述 生产厂家 企业 LOGO 操作
IS41C16105-50KI

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,

ICSI

IS41C16105-50KI

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,

ISSI

矽成半导体

1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

[ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower

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1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

[ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

[ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

[ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

IS41C16105-50KI产品属性

  • 类型

    描述

  • 型号

    IS41C16105-50KI

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    1M x 16(16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

更新时间:2025-10-3 11:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
24+
TSOP44
9600
原装现货,优势供应,支持实单!
ISSI
23+
SOJ
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ISSI
2447
SOJ
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ISSI
23+
SOJ
8000
只做原装现货
ISSI
23+
TSOP44
55229
##公司主营品牌长期供应100%原装现货可含税提供技术
ISSI
23+
SOJ
50000
全新原装正品现货,支持订货
ISSI
2023+
SOJ
50000
原装现货
INTEGRATEDSI
05+
原厂原装
5216
只做全新原装真实现货供应
ISSI
24+
TSOP44
5000
只做原装公司现货
ISSI
21+
SOJ
10000
原装现货假一罚十

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