型号 功能描述 生产厂家 企业 LOGO 操作
IS41C16100S-60T

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2

ICSI

IS41C16100S-60T产品属性

  • 类型

    描述

  • 型号

    IS41C16100S-60T

  • 制造商

    ICSI

  • 制造商全称

    Integrated Circuit Solution Inc

  • 功能描述

    1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

更新时间:2026-1-30 17:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
20+
SOJ
35830
原装优势主营型号-可开原型号增税票
ISSI
2015+
DIP/SMD
19889
一级代理原装现货,特价热卖!
ISSI
2023+
TSOP
50000
原装现货
ISSI
22+
SOJ42
8000
原装正品支持实单
ISSI
25+
SOJ
3000
全新原装、诚信经营、公司现货销售
24+
SOJ
166
ISSI
24+
SOJ
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
INTEGRATEDSI
05+
原厂原装
5016
只做全新原装真实现货供应
ISSI
23+
SOJ-42
5000
原装正品,假一罚十
ISSI
25+
SOJ
4500
原装正品!公司现货!欢迎来电!

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