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IRG4PC40价格

参考价格：￥11.5467

型号：IRG4PC40FDPBF 品牌：International 备注：这里有IRG4PC40多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4PC40批发/采购报价，IRG4PC40行情走势销售排行榜，IRG4PC40报价。

型号	功能描述	生产厂家企业	LOGO
IRG4PC40	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A) Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (hard switched mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombinat	IRF	IRF
IRG4PC40	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A) Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies (	IRF	IRF
IRG4PC40	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A) Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-sof	IRF	IRF
IRG4PC40	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A) Fast Speed IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package Benefits • Gener	IRF	IRF
IRG4PC40	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)	Infineon 英飞凌	Infineon
IRG4PC40F	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A) Fast Speed IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package Benefits • Gener	IRF	IRF
IRG4PC40FD	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A) Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-sof	IRF	IRF
IRG4PC40FDPBF	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-pa	IRF	IRF
IRG4PC40FPBF	INSULATED GATE BIPOLARTRANSISTOR Fast Speed IGBT Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free Benefit	IRF	IRF
IRG4PC40K	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-247AC package Bene	IRF	IRF
IRG4PC40KD	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT	IRF	IRF
IRG4PC40KDPBF	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE	IRF	IRF
IRG4PC40KPBF	INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT	IRF	IRF
IRG4PC40S	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A) Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies (	IRF	IRF
IRG4PC40U	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A) Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs Features • UltraFast: Optimized for high operating frequencies 8-40 kHz	IRF	IRF
IRG4PC40UD	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE( Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A) UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ult	IRF	IRF
IRG4PC40UD-EPBF	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-pa	IRF	IRF
IRG4PC40UDPBF	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-pa	IRF	IRF
IRG4PC40UDPBF	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-pa	IRF	IRF
IRG4PC40UPBF	INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs Features • UltraFast: Optimized for high operating frequencies 8-40 kHz	IRF	IRF
IRG4PC40W	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A) Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (hard switched mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombinat	IRF	IRF
IRG4PC40WPBF	INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and c	IRF	IRF
IRG4PC40F	Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages	IRF	IRF
IRG4PC40FD	Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages	IRF	IRF
IRG4PC40FD	封装/外壳：TO-247-3 包装：卷带（TR）描述：IGBT 600V 49A 160W TO247AC 分立半导体产品晶体管 - UGBT、MOSFET - 单	Infineon 英飞凌	Infineon
IRG4PC40FD	600V Fast 1-8 kHz Copack IGBT in a TO-247AC package	Infineon 英飞凌	Infineon
IRG4PC40FDPBF	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：348.19 Kbytes Page：10 Pages	IRF	IRF
IRG4PC40FDPBF	封装/外壳：TO-247-3 包装：卷带（TR）描述：IGBT 600V 49A TO247AC 分立半导体产品晶体管 - UGBT、MOSFET - 单	Infineon 英飞凌	Infineon
IRG4PC40FDPBF_15	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：348.19 Kbytes Page：10 Pages	IRF	IRF
IRG4PC40FPBF	INSULATED GATE BIPOLAR TRANSISTOR 文件：269.19 Kbytes Page：9 Pages	IRF	IRF
IRG4PC40FPBF_15	INSULATED GATE BIPOLAR TRANSISTOR 文件：269.19 Kbytes Page：9 Pages	IRF	IRF
IRG4PC40K	600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package	Infineon 英飞凌	Infineon
IRG4PC40K	Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages	IRF	IRF
IRG4PC40KD	Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages	IRF	IRF
IRG4PC40KDPBF	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：326.65 Kbytes Page：11 Pages	IRF	IRF
IRG4PC40KDPBF_15	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：326.65 Kbytes Page：11 Pages	IRF	IRF
IRG4PC40KPBF	INSULATED GATE BIPOLAR TRANSISTOR 文件：244.45 Kbytes Page：9 Pages	IRF	IRF
IRG4PC40KPBF_15	INSULATED GATE BIPOLAR TRANSISTOR 文件：244.45 Kbytes Page：9 Pages	IRF	IRF
IRG4PC40MD	Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages	IRF	IRF
IRG4PC40S	Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages	IRF	IRF
IRG4PC40S	INSULATED GATE BIPOLAR TRANSISTOR 文件：902 Kbytes Page：3 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
IRG4PC40SD	Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages	IRF	IRF
IRG4PC40SPBF	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT 文件：627.83 Kbytes Page：8 Pages	IRF	IRF
IRG4PC40SPBF	INSULATED GATE BIPOLAR TRANSISTOR 文件：636.79 Kbytes Page：9 Pages	IRF	IRF
IRG4PC40SPBF_15	INSULATED GATE BIPOLAR TRANSISTOR 文件：636.79 Kbytes Page：9 Pages	IRF	IRF
IRG4PC40U	Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages	IRF	IRF
IRG4PC40UD	Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages	IRF	IRF
IRG4PC40UD2	Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages	IRF	IRF
IRG4PC40UDPBF	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：3.08942 Mbytes Page：11 Pages	IRF	IRF
IRG4PC40UDPBF_15	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：3.08942 Mbytes Page：11 Pages	IRF	IRF
IRG4PC40UPBF	INSULATED GATE BIPOLAR TRANSISTOR 文件：641.98 Kbytes Page：9 Pages	IRF	IRF
IRG4PC40UPBF_15	INSULATED GATE BIPOLAR TRANSISTOR 文件：641.98 Kbytes Page：9 Pages	IRF	IRF
IRG4PC40WPBF	INSULATED GATE BIPOLAR TRANSISTOR 文件：620.75 Kbytes Page：9 Pages	IRF	IRF
IRG4PC40WPBF_15	INSULATED GATE BIPOLAR TRANSISTOR 文件：620.75 Kbytes Page：9 Pages	IRF	IRF
G4PC40U	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A) Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs Features • UltraFast: Optimized for high operating frequencies 8-40 kHz	IRF	IRF
G4PC40W	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A) Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (hard switched mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombinat	IRF	IRF
AUIRG4PC40S-E	Insulated Gate Bipolar Transistor 文件：395.49 Kbytes Page：10 Pages	IRF	IRF
AUIRG4PC40S-E	Insulated Gate Bipolar Transistor 文件：1.2552 Mbytes Page：9 Pages	Infineon 英飞凌	Infineon

IRG4PC40产品属性

类型
描述
型号
IRG4PC40
功能描述
IGBT FAST 600V 49A TO-247AC
RoHS
否
类别
分离式半导体产品 >> IGBT - 单路
系列
-
标准包装
30
系列
GenX3™ IGBT
类型
PT 电压 -
集电极发射极击穿（最大）
1200V Vge,
Ic时的最大Vce（开）
3V @ 15V，100A 电流 -
集电极(Ic)（最大）
200A 功率 -
最大
830W
输入类型
标准
安装类型
通孔
封装/外壳
TO-247-3
供应商设备封装
PLUS247?-3
包装
管件

IRG4PC40供应商更多...

更新时间：2025-12-27 16:13:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科恒伟业电子有限公司	IRG4PC40WPBF	IR	2450+	TO-247	9850	只做原装正品现货或订货假一赔十!	询价
深圳市得捷芯城科技有限公司	IRG4PC40U	IR(国际整流器)	24+	N/A	8807	原厂可订货,技术支持,直接渠道。可签保供合同	询价
深圳市金华微盛电子有限公司	IRG4PC40WPBF	INFINEON	19+	TO-247	9000		询价
深圳市富利微电子科技有限公司	IRG4PC40WPBF	IR	24+	TO-247	20540	保证进口原装现货假一赔十	询价
深圳市恒凯威科技开发有限公司	IRG4PC40WPBF	IR	21+	TO-247	6880	只做原装,质量保证	询价
深圳市赛尔通科技有限公司	IRG4PC40WPBF	IR	23+	TO-247	65400		询价
深圳市明嘉莱科技有限公司	IRG4PC40FD	IR	24+	TO 247	160900	明嘉莱只做原装正品现货	询价
深圳市中远芯科技有限公司	IRG4PC40UDPBF	INFINEON/英飞凌	20+	TO-247	690	原装现货	询价
柒号芯城电子商务(深圳)有限公司	IRG4PC40S	IR	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
中天科工半导体（深圳）有限公司	IRG4PC40WPBF	INFINEON/英飞凌	25+	TO-247	32360	INFINEON/英飞凌全新特价IRG4PC40WPBF即刻询购立享优惠#长期有货	询价

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属性参数值商品目录 IGBT管集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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IRG4PC40价格

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