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位置：首页 > IC中文资料第2955页 > IRG4PC40U

IRG4PC40U价格

参考价格：￥21.3201

型号：IRG4PC40UD-EPBF 品牌：INTERNATIONAL 备注：这里有IRG4PC40U多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4PC40U批发/采购报价，IRG4PC40U行情走势销售排行榜，IRG4PC40U报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRG4PC40U

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)

Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs Features • UltraFast: Optimized for high operating frequencies 8-40 kHz

IRF

IRG4PC40U

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

IRF

IRG4PC40U

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 600V 40A 160W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

IRG4PC40

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)

Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies (

IRF

IRG4PC40UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE( Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)

UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ult

IRF

IRG4PC40UD-EPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-pa

IRF

IRG4PC40UDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-pa

IRF

IRG4PC40UDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-pa

IRF

IRG4PC40UPBF

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs Features • UltraFast: Optimized for high operating frequencies 8-40 kHz

IRF

IRG4PC40UD

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

IRF

IRG4PC40UD2

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

IRF

IRG4PC40UDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：3.08942 Mbytes Page：11 Pages

IRF

IRG4PC40UDPBF

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 600V 40A 160W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

IRG4PC40UDPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：3.08942 Mbytes Page：11 Pages

IRF

IRG4PC40UPBF

INSULATED GATE BIPOLAR TRANSISTOR

文件：641.98 Kbytes Page：9 Pages

IRF

IRG4PC40UPBF_15

INSULATED GATE BIPOLAR TRANSISTOR

文件：641.98 Kbytes Page：9 Pages

IRF

G4PC40U

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)

Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs Features • UltraFast: Optimized for high operating frequencies 8-40 kHz

IRF

G4PC40W

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)

Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (hard switched mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombinat

IRF

AUIRG4PC40S-E

Insulated Gate Bipolar Transistor

文件：395.49 Kbytes Page：10 Pages

IRF

AUIRG4PC40S-E

Insulated Gate Bipolar Transistor

文件：1.2552 Mbytes Page：9 Pages

Infineon

英飞凌

IRG4PC40U产品属性

  • 类型

    描述

  • 型号

    IRG4PC40U

  • 功能描述

    IGBT UFAST 600V 40A TO-247AC

  • RoHS

    否

  • 类别

    分离式半导体产品 >> IGBT - 单路

  • 系列

    -

  • 标准包装

    30

  • 系列

    GenX3™ IGBT

  • 类型

    PT 电压 -

  • 集电极发射极击穿（最大）

    1200V Vge,

  • Ic时的最大Vce（开）

    3V @ 15V，100A 电流 -

  • 集电极(Ic)（最大）

    200A 功率 -

  • 最大

    830W

  • 输入类型

    标准

  • 安装类型

    通孔

  • 封装/外壳

    TO-247-3

  • 供应商设备封装

    PLUS247?-3

  • 包装

    管件

IRG4PC40U供应商更多...

更新时间：2025-8-9 8:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市恒创达实业有限公司
IRG4PC40U
IR
17+
TO-247
6200
100%原装正品现货
询价
深圳瞄钧科技有限公司
IRG4PC40UDPBF
IR
24+
TO-247
48650
诚信经营原装现货
询价
深圳市明嘉莱科技有限公司
IRG4PC40UD
IR
24+
TO 247
160894
明嘉莱只做原装正品现货
询价
深圳市弘为电子有限公司
IRG4PC40U
IR
24+
原厂封装
541
原装现货假一罚十
询价
中天科工半导体（深圳）有限公司
IRG4PC40UDPBF
INFINEON/英飞凌
25+
TO-247
32360
INFINEON/英飞凌全新特价IRG4PC40UDPBF即刻询购立享优惠#长期有货
询价
深圳市富利微电子科技有限公司
IRG4PC40UDPBF
IR
24+
TO-247
20540
保证进口原装现货假一赔十
询价
深圳市恒达亿科技有限公司
IRG4PC40U
IR
25+
TO-247
4500
全新原装、诚信经营、公司现货销售
询价
深圳市永贝尔科技有限公司
IRG4PC40UD
IR(国际整流器)
2023+
N/A
4550
全新原装正品
询价
深圳市佳鑫美电子科技有限公司
IRG4PC40U
IR
24+
TO-247AC
45000
绝对全新原装公司长期有货
询价
深圳市福田区绿盛电子商行
IRG4PC40U
IR
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价

IRG4PC40U芯片相关品牌

IRG4PC40U规格书下载地址

IRG4PC40U参数引脚图相关

IRG4PC40U数据表相关新闻

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