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IRG4PC40KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

IRG4PC40KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:326.65 Kbytes Page:11 Pages

IRF

IRG4PC40KDPBF

封装/外壳:TO-247-3 包装:卷带(TR) 描述:IGBT 600V 42A 160W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INFINEON

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:326.65 Kbytes Page:11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)

Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (hard switched mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombinat

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)

Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies (

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)

Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-sof

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)

Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)

Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs Features • UltraFast: Optimized for high operating frequencies 8-40 kHz

IRF

IRG4PC40KDPBF产品属性

  • 类型

    描述

  • 型号

    IRG4PC40KDPBF

  • 功能描述

    IGBT 晶体管 600V ULTRAFAST 8-25 KHZ COPACK IGBT

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2026-3-17 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-247
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
25+
34
公司优势库存 热卖中!
IR
20+
TO-247
38900
原装优势主营型号-可开原型号增税票
Infineon Technologies
22+
TO247AC
9000
原厂渠道,现货配单
INFINEON/英飞凌
24+
TO-247
880000
明嘉莱只做原装正品现货
IR-MX
14+
TO247
525
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
21+
TO-247
4002
Infineon
24+
NA
3000
进口原装正品优势供应
IR
TO-247
23+
6000
原装现货有上库存就有货全网最低假一赔万
IR
25+23+
TO-247
37113
绝对原装正品全新进口深圳现货

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