INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)

Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (hard switched mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombinat

600V Warp 60-150 kHz 分立 IGBT，采用 TO-247AC 封装

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)

Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies (

INSULATED GATE BIPOLAR TRANSISTOR

Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and c

INSULATED GATE BIPOLAR TRANSISTOR

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封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 600V 40A 160W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INSULATED GATE BIPOLAR TRANSISTOR

文件：620.75 Kbytes Page：9 Pages

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)

Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs Features • UltraFast: Optimized for high operating frequencies 8-40 kHz

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)

Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (hard switched mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombinat

Insulated Gate Bipolar Transistor

文件：395.49 Kbytes Page：10 Pages

Insulated Gate Bipolar Transistor

文件：1.2552 Mbytes Page：9 Pages