INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-pa

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 600V 49A TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)

Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies (

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)

Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs Features • UltraFast: Optimized for high operating frequencies 8-40 kHz

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)

Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (hard switched mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombinat

Insulated Gate Bipolar Transistor

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Insulated Gate Bipolar Transistor

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