INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)

Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-sof

600V Fast 1-8 kHz Copack IGBT in a TO-247AC package

600V IGBT 与超快 8-25 kHz 软恢复二极管联合封装到 TO-247AC 封装中\n   • 对中等工作频率进行了优化\n• 参数分布更紧凑，效率更高\n• 与 HEXFREDTM 超快、超软恢复反并联二极管联合封装的 IGBT，在桥配置中使用\n• 行业标准 TO-247AC 封装\n• 无铅\n\n\n优势:\n• IGBT 提供可实现的出色效率\n• 针对特定应用条件进行过优化的 IGBT\n• HEXFRED 二极管与 IGBT 并用优化。恢复特性最小化，对缓冲的要求更少甚至不需要。\n• 旨在“直接替代”同等行业内标准的第三代 IR IGBT\n ;

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 600V 49A 160W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-pa

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：348.19 Kbytes Page：10 Pages

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 600V 49A TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：348.19 Kbytes Page：10 Pages

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)

Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (hard switched mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombinat

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)

Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies (

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)

Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)

Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs Features • UltraFast: Optimized for high operating frequencies 8-40 kHz