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位置：首页 > IC中文资料 > IRG4PC40UD

IRG4PC40UD价格

参考价格：￥21.3201

型号：IRG4PC40UD-EPBF 品牌：INTERNATIONAL 备注：这里有IRG4PC40UD多少钱，2026年最近7天走势，今日出价，今日竞价，IRG4PC40UD批发/采购报价，IRG4PC40UD行情走势销售排行榜，IRG4PC40UD报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRG4PC40UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE( Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)

UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ult

IRF

IRG4PC40UD

600V 超快 8-60 kHz Copack IGBT，采用 TO-247AC 封装

• UltraFast: Optimized for high operating frequencies 8-40kHz in hard switching, >200kHz in resonant mode\n• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3\n• IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery anti-parallel diodes ;

INFINEON

英飞凌

IRG4PC40UD

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

IRF

IRG4PC40UD-EPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-pa

IRF

IRG4PC40UDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-pa

IRF

IRG4PC40UDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-pa

IRF

IRG4PC40UD2

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

IRF

IRG4PC40UD-EPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

INFINEON

英飞凌

IRG4PC40UD-EPBF

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 600V 40A 160W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INFINEON

英飞凌

IRG4PC40UDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：3.08942 Mbytes Page：11 Pages

IRF

IRG4PC40UDPBF

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 600V 40A 160W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INFINEON

英飞凌

IRG4PC40UDPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：3.08942 Mbytes Page：11 Pages

IRF

IRG4PC40

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)

Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (hard switched mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombinat

IRF

IRG4PC40

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)

Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies (

IRF

IRG4PC40FD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)

Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-sof

IRF

IRG4PC40KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)

Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT

IRF

IRG4PC40U

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)

Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs Features • UltraFast: Optimized for high operating frequencies 8-40 kHz

IRF

IRG4PC40UD产品属性

  • 类型

    描述

  • Technology ：

    IGBT Gen 4

  • Switching Frequency min max：

    8.0kHz 30.0kHz

  • Package ：

    TO-247

  • Voltage Class max：

    600.0V

  • IC(@100°) max：

    20.0A

  • IC(@25°) max：

    40.0A

  • ICpuls max：

    160.0A

  • Ptot max：

    160.0W

  • VCE(sat) ：

    1.72V 

  • Eon ：

    0.71mJ 

  • Eoff(Hard Switching) ：

    0.35mJ 

  • td(on) ：

    54.0ns 

  • tr ：

    57.0ns 

  • td(off) ：

    110.0ns 

  • tf ：

    80.0ns 

  • QGate ：

    100.0nC 

  • IF max：

    160.0A

  • VF ：

    1.3V 

  • Qrr ：

    80.0nC 

  • Irrm ：

    4.0A 

  • Ets  (max)：

    1.1mJ (1.5mJ)

  • VCE max：

    600.0V

IRG4PC40UD供应商更多...

更新时间：2026-8-2 16:30:00
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