INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)

Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-247AC package Bene

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 42A 160W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package

600V UltraFast 8-25 kHz Copack IGBT in a TO-247AC package

600V IGBT 与超快 8-25 kHz 软恢复二极管联合封装到 TO-247AC 封装中。 • 经过优化的高工作频率 > 5,0 kHz\n• 额定短路时间为 10 μs @ 125°C, VGE=15V\n• 参数分布更紧凑，效率更高\n• 与 HEXFREDTM 超快、超软恢复反并联二极管联合封装的 IGBT，在桥配置中使用\n• 行业标准 TO-247AC 封装\n• 无铅\n\n优势:\n• IGBT 提供可实现的出色效率\n• HEXFRED 二极管与 IGBT 并用优化。恢复特性最小化，对缓冲的要求更少甚至不需要。\n• 旨在“直接替代”同等行业内标准的第三代 IR IGBT;

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)

Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 600V 42A 160W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：326.65 Kbytes Page：11 Pages

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：326.65 Kbytes Page：11 Pages

INSULATED GATE BIPOLAR TRANSISTOR

文件：244.45 Kbytes Page：9 Pages

INSULATED GATE BIPOLAR TRANSISTOR

文件：244.45 Kbytes Page：9 Pages

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)

Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (hard switched mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombinat

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)

Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies (

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)

Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-sof

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)

Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs Features • UltraFast: Optimized for high operating frequencies 8-40 kHz