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位置：首页 > IC中文资料 > IRFR

IRFR价格

参考价格：￥3.8129

型号：IRFR010PBF 品牌：Vishay 备注：这里有IRFR多少钱，2026年最近7天走势，今日出价，今日竞价，IRFR批发/采购报价，IRFR行情走势销售排行榜，IRFR报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFR

Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

IRF

IRFR

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

IRFR

Surface Mount (IRFR120N)

文件：3.73792 Mbytes Page：10 Pages

KERSEMI

IRFR

Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A)

INFINEON

英飞凌

IRFR024

丝印代码：IRFR024；N-Channel Enhancement Mode MOSFET

Description The IRFR024NT uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =30 A RDS(ON)

EVVOSEMI

翊欧

IRFR5305TR

丝印代码：IRFR5305；-60 V P-Channel Enhancement Mode MOSFET

DESCRIPTION The uses advancedtrench technology to provide excellentRDS(ON) and low gate charge .Thisdevice issuitable for use as a loadswitch or inPWM applications. GENERAL FEATURES VDS =- 60V,ID =-30A RDS(ON)

EVVOSEMI

翊欧

IRFR5305TR

丝印代码：IRFR5305；-60 V P - Channel Enhancement Mode MOSFET

GENERAL FEATURES VDS =- 60V,ID =-30A RDS(ON)

UMW

友台半导体

IRFR5505TR

丝印代码：IRFR5505；-60V P -Channel Enhancement Mode MOSFET

General Features VDS = -60V ID =-10 A RDS(ON)

UMW

友台半导体

IRFR5505TR

丝印代码：IRFR5505；-60V P -Channel Enhancement Mode MOSFET

Description The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -60V ID =-10 A RDS(ON)

EVVOSEMI

翊欧

IRFR9024NTR

丝印代码：IRFR9024；60V P-Channel Enhancement Mode MOSFET

General Features Vos = -60V Ip =-20 A Ros(on)

EVVOSEMI

翊欧

IRFR9024NTR

丝印代码：IRFR9024；-60V P -Channel Enhancement Mode MOSFET

General Features Vps =-60V Ip=-20A Robson)

UMW

友台半导体

IRFR9120N

丝印代码：IRFR9120N；-100V P-Channel Enhancement Mode MOSFET

General Features VDS=-100V,ID=-8A RDS(ON)

EVVOSEMI

翊欧

IRFR9120NTR

丝印代码：IRFR9120；-100V P-Channel Enhancement Mode MOSFET

General Features Vbs =-100V,Ip =-8A Rosin)

UMW

友台半导体

IRFR/U1010Z

Advanced Process Technology

Description Specifically designed for Automotive applications, this MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetiti

KERSEMI

IRFR/U220A

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 A (Max.) @ VDS= 200V ■ Low RDS(ON) : 0.626 Ω (Typ.)

FAIRCHILD

仙童半导体

IRFR/U2405

Surface Mount (IRFR2405)

Description The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ● Surf

KERSEMI

IRFR/U3303

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

KERSEMI

IRFR/U3303PBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

KERSEMI

IRFR/U3709Z

High Frequency Synchronous Buck Converters for Computer Processor Power

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power ● High Frequency Isolated DC-DC Converters with Synchronous Rectification

KERSEMI

IRFR010

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d

KERSEMI

IRFR010

Power MOSFET

Low drive current\nSurface-mount\nFast switching;

VISHAYVishay Siliconix

威世威世科技公司

IRFR010

N-CHANNEL POWER MOSFET

SAMSUNG

三星

IRFR010

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d

VISHAYVishay Siliconix

威世威世科技公司

IRFR010

Power MOSFET

FEATURES • Low drive current • Surface-mount • Fast switching • Ease of paralleling • Excellent temperature stability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The power MOSFET technology is the key to Vishay’s advanced lin

VISHAYVishay Siliconix

威世威世科技公司

IRFR010

AVALANCHE AND dv/dt RATED

IRF

IRFR010_V01

Power MOSFET

FEATURES • Low drive current • Surface-mount • Fast switching • Ease of paralleling • Excellent temperature stability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The power MOSFET technology is the key to Vishay’s advanced lin

VISHAYVishay Siliconix

威世威世科技公司

IRFR010PBF

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d

VISHAYVishay Siliconix

威世威世科技公司

IRFR010PBF

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d

KERSEMI

IRFR012

AVALANCHE AND dv/dt RATED

IRF

IRFR014

Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techni

IRF

IRFR014

Power MOSFET

FEATURES • Dynamic dV/dt rating • Surface-mount (IRFR014, SiHFR014) • Straight lead (IRFU014, SiHFU014) • Available in tape and reel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99

VISHAYVishay Siliconix

威世威世科技公司

IRFR014

N-CHANNEL POWER MOSFET

SAMSUNG

三星

IRFR014

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VISHAYVishay Siliconix

威世威世科技公司

IRFR014

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

IRFR014_V01

Power MOSFET

FEATURES • Dynamic dV/dt rating • Surface-mount (IRFR014, SiHFR014) • Straight lead (IRFU014, SiHFU014) • Available in tape and reel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99

VISHAYVishay Siliconix

威世威世科技公司

IRFR014A

ADVANCED POWER MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.097Ω (Typ.)

FAIRCHILD

仙童半导体

IRFR014PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VISHAYVishay Siliconix

威世威世科技公司

IRFR014PBF

HEXFET Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techni

IRF

IRFR014PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

IRFR014TR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

IRFR014TR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VISHAYVishay Siliconix

威世威世科技公司

IRFR014TRL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VISHAYVishay Siliconix

威世威世科技公司

IRFR014TRL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

IRFR014TRLPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

IRFR014TRLPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VISHAYVishay Siliconix

威世威世科技公司

IRFR014TRPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VISHAYVishay Siliconix

威世威世科技公司

IRFR014TRPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

IRFR020

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU

KERSEMI

IRFR020

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU

VISHAYVishay Siliconix

威世威世科技公司

IRFR020

HEXFETR Power MOSFET

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniq

IRF

IRFR020

Power MOSFET

FEATURES • Dynamic dV/dt rating • Surface-mount (IRFR020, SiHFR020) • Available in tape and reel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation

VISHAYVishay Siliconix

威世威世科技公司

IRFR020_V01

Power MOSFET

FEATURES • Dynamic dV/dt rating • Surface-mount (IRFR020, SiHFR020) • Available in tape and reel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation

VISHAYVishay Siliconix

威世威世科技公司

IRFR020PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU

VISHAYVishay Siliconix

威世威世科技公司

IRFR020PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU

KERSEMI

IRFR020TR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU

KERSEMI

IRFR020TR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU

VISHAYVishay Siliconix

威世威世科技公司

IRFR020TRPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU

VISHAYVishay Siliconix

威世威世科技公司

IRFR020TRPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU

KERSEMI

IRFR024

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

IRFR024

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VISHAYVishay Siliconix

威世威世科技公司

IRFR产品属性

  • 类型

    描述

  • OPN：

    IRFR024NTRLPBF/IRFR024NTRPBF

  • Qualification：

    Non-Automotive

  • Package name：

    DPAK/DPAK

  • VDS max：

    55 V

  • RDS (on) @10V max：

    75 mΩ/75 mΩ

  • ID @25°C max：

    17 A/17 A

  • QG typ @10V：

    13.3 nC/13.3 nC

  • Polarity：

    N

  • VGS(th) min：

    2 V/2 V

  • VGS(th) max：

    4 V/4 V

  • VGS(th)：

    3 V/3 V

  • Technology：

    IR MOSFET™/IR MOSFET™

IRFR供应商更多...

更新时间：2026-5-14 15:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
标准国际(香港)有限公司
IRFR2405
IR
25+
TO-252
100
公司原装现货
询价
深圳市凌旭科技有限公司
IRFR5305TRPBF
INFINEON
21+
TO-252
8000
绝对原装INFINEON正品现货，12年信誉保证只做原装、一定有货！
询价
深圳市昌和盛利电子有限公司
IRFR/U020
IR
26+
TO-251/TO-25
9896
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
询价
深圳市安富世纪电子有限公司
IRFR
IR
23+
SOT-252
8000
只做原装现货
询价
天津市博通航睿技术有限公司
IRFR
IR
23+
SOT-252
7000
询价
深圳市英博尔电子有限公司
IRFR9024NTRPBF
INFINEON
23+
TO-252
10000
全新、原装
询价
深圳市河锋鑫科技有限公司
IRFR
IR
22+
SOT-252
6000
终端可免费供样,支持BOM配单
询价
深圳市勤思达科技有限公司
IRFR110TRPBF
IR
13+
TO-252
100000
深圳市勤思达科技有限公司主营IR系列全新原装正品,公司现货供应IRFR110TRPBF,绝对正品,欢迎咨询洽谈。
询价
深圳市誉兴微科技有限公司
IRFR3410TRPBF
Infineon
25+
TO-252AA
16000
原装
询价
北京贝诺电子科技发展有限公司
IRFR120ZTRPBF
IR
SOT252
1800
现货当天发货
询价

IRFR芯片相关品牌

IRFR规格书下载地址

IRFR参数引脚图相关

IRFR数据表相关新闻

  • IRFR15N20DTRPBF

    表面贴装型 N 通道 200 V 17A（Tc） 3W（Ta），140W（Tc） D-PAK（TO-252AA）

    2022-10-19

  • IRFP4668PBF 全新原装现货

    IRFP4668PBF

    2022-6-27

  • IRFR13N20DTRPBF

    联系人张生 电话19926428992 QQ1924037095

    2021-10-12

  • IRFR13N20DTRPBF

    属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道

    2021-10-12

  • IRFP460PBF

    IRFP460PBF

    2021-5-20

  • IRFP460PBF 原装正品 现货供应

    IRFP460PBF 原装现货供应 0755-28892389 13713856319 QQ:2639752116

    2021-3-12

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