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IRFR020价格
参考价格：￥4.8534
型号：IRFR020PBF 品牌：Vishay 备注：这里有IRFR020多少钱，2026年最近7天走势，今日出价，今日竞价，IRFR020批发/采购报价，IRFR020行情走势销售排行榜，IRFR020报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR020 | HEXFETR Power MOSFET DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniq | IRF |   | |
IRFR020 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFR020 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU | KERSEMI | | |
IRFR020 | Power MOSFET FEATURES • Dynamic dV/dt rating • Surface-mount (IRFR020, SiHFR020) • Available in tape and reel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFR020 | Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFR020 | HEXFETR Power MOSFET | INFINEON 英飞凌 | | |
IRFR020 | N-Channel MOSFET uses advanced trench technology 文件：674.87 Kbytes Page：5 Pages | DOINGTER 杜因特 | | |
IRFR020 | isc N-Channel MOSFET Transistor 文件：321.29 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRFR020 | Power MOSFET 文件：1.05728 Mbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFR020 | Power MOSFET 文件：1.05728 Mbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
Power MOSFET FEATURES • Dynamic dV/dt rating • Surface-mount (IRFR020, SiHFR020) • Available in tape and reel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.05728 Mbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.05728 Mbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.05728 Mbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.05728 Mbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.05947 Mbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.05947 Mbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
FIELD PROGRAMMABLE ANALOG ARRAY The MPAA020 is a field programmable analog array based on a general purpose analog cell that may be configured, either alone or in combinations, as any of a wide range of analog functions from simple comparators to complex filters. These cells are arranged in a 4 x 5 array with supporting circuitr | MOTOROLA 摩托罗拉 | | ||
20W Standard Package DESCRIPTION MWS DC/DC converters provide up to 20 watts of output power in an industry-standard package and footprint. The MWS is available in either 24V or 48V input versions. With a maximum case temperature of 100°C, the MWS is well suited for the most demanding telecom, networking, and industr | POWER-ONE | | ||
SCRs General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga | TECCOR | | ||
96kHz DIGITAL AUDIO INTERFACE TRANSMITTER DESCRIPTION The STA020 is a monolithic CMOS device which encodes and transmits audio data according to the AES/EBU, IEC 958, S/PDIF, & EIAJ CP-340 interface standards. It supports 96kHz sample rate operation The STA020 accepts audio and digital data which is then multiplexed, encoded and dri | STMICROELECTRONICS 意法半导体 | | ||
96kHz DIGITAL AUDIO INTERFACE TRANSMITTER DESCRIPTION The STA020 is a monolithic CMOS device which encodes and transmits audio data according to the AES/EBU, IEC 958, S/PDIF, & EIAJ CP-340 interface standards. It supports 96kHz sample rate operation The STA020 accepts audio and digital data which is then multiplexed, encoded and dri | STMICROELECTRONICS 意法半导体 | |
IRFR020产品属性
- 类型
描述
- 型号
IRFR020
- 功能描述
MOSFET N-Chan 60V 14 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
24+ |
TO 252 |
161321 |
明嘉莱只做原装正品现货 |
|||
VISHAY |
25+23+ |
TO252 |
9150 |
绝对原装正品全新进口深圳现货 |
|||
IR |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IRFR020TR |
25+ |
30 |
30 |
||||
IR |
22+ |
TO-252 |
8000 |
原装正品支持实单 |
|||
IR |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
24+ |
TO-252 |
36800 |
||||
IR |
17+ |
TO-252 |
6200 |
||||
IR |
26+ |
SOP8 |
86720 |
全新原装正品价格最实惠 假一赔百 |
IRFR020规格书下载地址
IRFR020参数引脚图相关
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- IRFPC40
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- IRFP462
IRFR020数据表相关新闻
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属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
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2021-3-12
DdatasheetPDF页码索引
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