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IRFR014价格
参考价格：￥2.5249
型号：IRFR014PBF 品牌：Vishay 备注：这里有IRFR014多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR014批发/采购报价，IRFR014行情走势销售排行榜，IRFR014报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR014 | Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A) Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techni | IRF |   | |
IRFR014 | N-CHANNEL POWER MOSFET
| Samsung 三星 | | |
IRFR014 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR014 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | |
IRFR014 | Power MOSFET FEATURES • Dynamic dV/dt rating • Surface-mount (IRFR014, SiHFR014) • Straight lead (IRFU014, SiHFU014) • Available in tape and reel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99 | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR014 | Power MOSFET 文件：1.92902 Mbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR014 | Power MOSFET 文件：1.92902 Mbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR014 | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR014 | Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A) | Infineon 英飞凌 | | |
IRFR014 | isc N-Channel MOSFET Transistor 文件：321.17 Kbytes Page：2 Pages | ISC 无锡固电 | | |
Power MOSFET FEATURES • Dynamic dV/dt rating • Surface-mount (IRFR014, SiHFR014) • Straight lead (IRFU014, SiHFU014) • Available in tape and reel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99 | VishayVishay Siliconix 威世威世科技公司 | | ||
ADVANCED POWER MOSFET FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.097Ω (Typ.) | Fairchild 仙童半导体 | | ||
HEXFET Power MOSFET Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techni | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET 文件：1.92902 Mbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
ADVANCED POWER MOSFET | ONSEMI 安森美半导体 | | ||
Power MOSFET 文件：892.51 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.92902 Mbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：892.51 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.92902 Mbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.92902 Mbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.92902 Mbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：892.51 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：892.51 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.92902 Mbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：892.51 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：892.51 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：892.51 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
STATIC SEALS DESCRIPTION The BECA 014 profile is a polyurethane static seal. It provides an alternative solution to combining an O'Ring (possible twisting during fitting) with a back-up ring (positioning is not always optimal). APPLICATIONS Mobile hydraulics Injection presses Presses Standard cy | FRANCEJOINT | | ||
3-Cup Anemometer Benefits and Features Ideal for applications that do not require wind direction measurements Sealed magnetic reed switch Designed for continuous, long term, unattended operation in adverse conditions Standard aluminum cup assembly has a distance constant of less than 4.5 m For greater se | CAMPBELL | | ||
Field replaceable bearings and electronics 文件：899.27 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Aluminum or Lexan cups available 文件：374.14 Kbytes Page：2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
EFD20 HIGH FREQUENCY PoE TRANSFORMER 文件：280.38 Kbytes Page：1 Pages | ALLIED | |
IRFR014产品属性
- 类型
描述
- 型号
IRFR014
- 功能描述
MOSFET N-Chan 60V 7.7 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
25+ |
原厂原封可拆样 |
64687 |
百分百原装现货 实单必成 欢迎询价 |
|||
IR |
06+ |
TO-252 |
15000 |
原装 |
|||
VISHAY/威世 |
23+ |
TO-252 |
4500 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
IR |
24+ |
TO-252 |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
Vishay |
23+ |
51000 |
加QQ:78517935原装正品有单必成 |
||||
INFINEON/英飞凌 |
22+ |
TO-252 |
12500 |
原装正品支持实单 |
|||
VISHAY/威世 |
2023+ |
TO-252 |
5000 |
全新原装正品,优势价格 |
|||
IR |
25+ |
TO-252 |
30000 |
全新原装现货,价格优势 |
|||
IR |
25+ |
TO-252 |
2679 |
原装优势!绝对公司现货!可长期供货! |
|||
VISHAY/IR |
22+ |
原厂封装 |
9025 |
原装正品，实单请联系 |
IRFR014规格书下载地址
IRFR014参数引脚图相关
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- IRFR1018EPBF
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- IRFR024TRPBF-CUTTAPE
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- IRFR024NTRPBF-CUTTAPE
- IRFR024NTRPBF
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- IRFR024NPBF
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- IRFR020PBF
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- IRFQ110
- IRFPS43N50KPBF
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- IRFPG50PBF
- IRFPG50
- IRFPG40PBF
- IRFPG40
- IRFPG30PBF
- IRFPG30
- IRFPF50PBF
- IRFPF50
- IRFPF40PBF
- IRFPF40
- IRFPF30
- IRFPE50PBF
- IRFPE50
- IRFPE40PBF
- IRFPE40
- IRFPE30PBF
- IRFPE30
- IRFPC60PBF
- IRFPC60LCPBF
- IRFPC60
- IRFPC50PBF
- IRFPC50LCPBF
- IRFPC50
- IRFPC48
- IRFPC40
- IRFPC30
- IRFP470
- IRFP462
- IRFP460
IRFR014数据表相关新闻
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表面贴装型 N 通道 200 V 17A（Tc） 3W（Ta），140W（Tc） D-PAK（TO-252AA）
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联系人张生 电话19926428992 QQ1924037095
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属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
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IRFP460PBF 原装现货供应 0755-28892389 13713856319 QQ:2639752116
2021-3-12
DdatasheetPDF页码索引
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