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IRFR014TR价格
参考价格：￥1.3797
型号：IRFR014TRPBF 品牌：Vishay 备注：这里有IRFR014TR多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR014TR批发/采购报价，IRFR014TR行情走势销售排行榜，IRFR014TR报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR014TR | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 |   | |
IRFR014TR | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | |
IRFR014TR | Power MOSFET 文件：1.92902 Mbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET 文件：1.92902 Mbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.92902 Mbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：892.51 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：892.51 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.92902 Mbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：892.51 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：892.51 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：892.51 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
STATIC SEALS DESCRIPTION The BECA 014 profile is a polyurethane static seal. It provides an alternative solution to combining an O'Ring (possible twisting during fitting) with a back-up ring (positioning is not always optimal). APPLICATIONS Mobile hydraulics Injection presses Presses Standard cy | FRANCEJOINT | | ||
3-Cup Anemometer Benefits and Features Ideal for applications that do not require wind direction measurements Sealed magnetic reed switch Designed for continuous, long term, unattended operation in adverse conditions Standard aluminum cup assembly has a distance constant of less than 4.5 m For greater se | CAMPBELL | | ||
Field replaceable bearings and electronics 文件：899.27 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Aluminum or Lexan cups available 文件：374.14 Kbytes Page：2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
EFD20 HIGH FREQUENCY PoE TRANSFORMER 文件：280.38 Kbytes Page：1 Pages | ALLIED | |
IRFR014TR产品属性
- 类型
描述
- 型号
IRFR014TR
- 功能描述
MOSFET N-Chan 60V 7.7 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
24+ |
TO-252 |
5000 |
十年沉淀唯有原装 |
|||
VISHAY/威世 |
24+ |
84000 |
只做原装进口现货 |
||||
VISHAY(威世) |
24+ |
TO-252 |
9908 |
支持大陆交货,美金交易。原装现货库存。 |
|||
VISHAY |
24+ |
NA |
30000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
IR |
24+ |
TO252 |
43200 |
郑重承诺只做原装进口现货 |
|||
IR |
25+23+ |
TO252 |
74460 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
VISHAY |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
|||
IR |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
17+ |
TO-252 |
6200 |
||||
VISHAY |
24+ |
TO-252 |
12000 |
VISHAY专营进口原装现货假一赔十 |
IRFR014TR规格书下载地址
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IRFR014TR数据表相关新闻
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属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
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2021-3-12
DdatasheetPDF页码索引
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