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IRFR014TR价格
参考价格：￥1.3797
型号：IRFR014TRPBF 品牌：Vishay 备注：这里有IRFR014TR多少钱，2026年最近7天走势，今日出价，今日竞价，IRFR014TR批发/采购报价，IRFR014TR行情走势销售排行榜，IRFR014TR报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR014TR | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 |   | |
IRFR014TR | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | |
IRFR014TR | Power MOSFET 文件：1.92902 Mbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.92902 Mbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.92902 Mbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：892.51 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：892.51 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.92902 Mbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：892.51 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：892.51 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：892.51 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel Enhancement Mode Field Effect Transistor General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. | FAIRCHILD 仙童半导体 | | ||
MPEG 2.5 LAYER III AUDIO DECODER WITH ADPCM AND SRS WOWO POSTPROCESSING CAPABILITY DESCRIPTION The STA014 is a fully integrated high flexibility MPEG Layer III Audio Decoder, capable of decoding Layer III compressed elementary streams, as specified in MPEG 1 and MPEG 2 ISO standards. The device decodes also elementary streams compressed by using low sampling rates, as specified | STMICROELECTRONICS 意法半导体 | | ||
MPEG 2.5 LAYER III AUDIO DECODER WITH ADPCM AND SRS WOWO POSTPROCESSING CAPABILITY DESCRIPTION The STA014 is a fully integrated high flexibility MPEG Layer III Audio Decoder, capable of decoding Layer III compressed elementary streams, as specified in MPEG 1 and MPEG 2 ISO standards. The device decodes also elementary streams compressed by using low sampling rates, as specified | STMICROELECTRONICS 意法半导体 | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV014A is designed for Television Band III Applications up to 225 MHz. FEATURES: • Common Emitter • PG = 14 dB at 14 W/225 MHz • Omnigold™ Metalization System • Emitter Ballasting | ASI | | ||
Adaptive Cable Equalizer for High-Speed Data Recovery 文件：521.28 Kbytes Page：18 Pages | NSC 国半 | |
IRFR014TR产品属性
- 类型
描述
- 型号
IRFR014TR
- 功能描述
MOSFET N-Chan 60V 7.7 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTERNATIONAL RECTIFIER |
2023+ |
SMD |
3842 |
安罗世纪电子只做原装正品货 |
|||
IR |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
22+ |
TO-252 |
8000 |
原装正品支持实单 |
|||
IR |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
2025+ |
TO-252 |
580 |
原装进口价格优 请找坤融电子! |
|||
IR |
24+ |
TO-252 |
36800 |
||||
VISHAY/IR |
22+ |
原厂封装 |
9025 |
原装正品，实单请联系 |
|||
IR |
25+ |
TO-252 |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
IR |
25+23+ |
TO252 |
74460 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
IR |
05+ |
原厂原装 |
6051 |
只做全新原装真实现货供应 |
IRFR014TR芯片相关品牌
IRFR014TR规格书下载地址
IRFR014TR参数引脚图相关
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IRFR014TR数据表相关新闻
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表面贴装型 N 通道 200 V 17A（Tc） 3W（Ta），140W（Tc） D-PAK（TO-252AA）
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属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
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2021-3-12
DdatasheetPDF页码索引
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