Ultra Low On-Resistance

Description The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

-100V P-Channel Enhancement Mode MOSFET

General Features VDS=-100V,ID=-8A RDS(ON)

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -6.6A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.48Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

-100V 单个 P 通道 HEXFET Power MOSFET, 采用 D-Pak 封装

Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A)

文件：117.52 Kbytes Page：10 Pages

HEXFET Power MOSFET ( VDSS = -100V , RDS(on) = 0.48廓 , ID = -6.6A )

HEXFET® Power MOSFET

ULTRA LOW ON-RESISTANCE

HEXFET® Power MOSFET

-100V P-Channel Enhancement Mode MOSFET

General Features Vbs =-100V,Ip =-8A Rosin)

ULTRA LOW ON RESISTANCE

文件：263.29 Kbytes Page：11 Pages

ULTRA LOW ON RESISTANCE

文件：263.29 Kbytes Page：11 Pages

Ultra Low On-Resistance

文件：2.42167 Mbytes Page：4 Pages

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文件：1.08907 Mbytes Page：9 Pages

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文件：3.88766 Mbytes Page：10 Pages

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P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：68.73 Kbytes Page：5 Pages

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：68.73 Kbytes Page：5 Pages