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IRFR024价格
参考价格：￥1.5480
型号：IRFR024NPBF 品牌：INTERNATIONAL 备注：这里有IRFR024多少钱，2024年最近7天走势，今日出价，今日竞价，IRFR024批发/采购报价，IRFR024行情走势销售排行榜，IRFR024报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR024 | HEXFETPOWERMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierprovidethedesignedwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechni | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   |
IRFR024 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | VishayVishay Siliconix 威世科技 |  | |
IRFR024 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. |  | |
IRFR024 | PowerMOSFET FEATURES •DynamicdV/dtrating •Surface-mount(IRFR024,SiHFR024) •Straightlead(IRFU024,SiHFU024) •Availableintapeandreel •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99 | VishayVishay Siliconix 威世科技 | | |
IRFR024 | iscN-ChannelMOSFETTransistor 文件：321.1 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IRFR024 | PowerMOSFET 文件：1.16522 Mbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | |
IRFR024 | PowerMOSFET 文件：1.16522 Mbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | |
IRFR024 | PowerMOSFET 文件：1.04466 Mbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | |
PowerMOSFET FEATURES •DynamicdV/dtrating •Surface-mount(IRFR024,SiHFR024) •Straightlead(IRFU024,SiHFU024) •Availableintapeandreel •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99 | VishayVishay Siliconix 威世科技 | | | |
UltraLowOn-Resistance Description TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthrough-holemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. ●Ultr | KERSEMI Kersemi Electronic Co., Ltd. | | | |
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | KERSEMI Kersemi Electronic Co., Ltd. | | | |
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechnigues. Features VDS(V)=55V ID=17A(VGS=10V) RDS(ON)=75mW(VGS=10V) | UMWUMW 友台友台半导体 |  | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.16522 Mbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.04466 Mbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | | |
iscN-ChannelMOSFETTransistor 文件：320.88 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor 文件：335.19 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PowerMOSFET(Vdss=55V,Rds(on)=0.075ohm,Id=17A?? 文件：178.33 Kbytes Page：10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
UltraLowOn-Resistance 文件：4.00212 Mbytes Page：10 Pages | KERSEMI Kersemi Electronic Co., Ltd. | | | |
ULTRALOWONRESISTANCE 文件：406.05 Kbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
UltraLowOn-Resistance 文件：406.05 Kbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
ULTRALOWONRESISTANCE 文件：406.05 Kbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
UltraLowOn-Resistance 文件：4.00212 Mbytes Page：10 Pages | KERSEMI Kersemi Electronic Co., Ltd. | | | |
UltraLowOn-Resistance 文件：406.05 Kbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
N-Channel60V(D-S)MOSFET 文件：1.04371 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
HEXFET짰PowerMOSFET 文件：406.05 Kbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFETPowerMOSFET 文件：1.7836 Mbytes Page：10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET 文件：1.16522 Mbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.06651 Mbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.16522 Mbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.16522 Mbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.06651 Mbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.16522 Mbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.06651 Mbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.06651 Mbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.06651 Mbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
LowPower,5MBdDigitalCMOSOptocoupler Description ACPL-M21L(singlechannelSO-5package),ACPL-021L(singlechannelSO-8package)andACPL-024L(dualchannelSO-8package)areoptically-coupledlogicgates.ThedetectorIChasCMOSoutputstageandopticalreceiverinputstagewithbuilt-inSchmitttriggertoprovidelogic-compatibl | AVAGOAvago 安华高安华高科技 |  | | |
PCboardmountinganddirectinsertmountingavailable 文件：1.60394 Mbytes Page：3 Pages | HUAXINANHuaXinAn Electronics CO.,LTD 华兴安深圳市华兴安电子有限公司 |  | | |
LowPower,5-MBdDigitalCMOSOptocoupler 文件：721.15 Kbytes Page：16 Pages | BOARDCOMBroadcom Corporation. 博通公司博通半导体 |  | | |
LowPower,5-MBdDigitalCMOSOptocoupler 文件：721.15 Kbytes Page：16 Pages | BOARDCOMBroadcom Corporation. 博通公司博通半导体 | | | |
DCPOWERJACKSPCBOARDANDPANELMOUNT 文件：214.2 Kbytes Page：3 Pages | ADAM-TECHAdam Technologies, Inc. 亚当科技亚当科技股份有限公司 |  | |
IRFR024产品属性
- 类型
描述
- 型号
IRFR024
- 功能描述
MOSFET N-Chan 60V 14 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay Siliconix |
24+ |
TO-252AA |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
IR |
2020+ |
TO-252 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
IR |
13+ |
TO-252 |
50000 |
深圳市勤思达科技有限公司主营IR系列全新原装正品,公司现货供应IRFR024NTRPBF,现货供应,欢迎咨询洽谈。 |
|||
INFINEON/英飞凌 |
TO252 |
25877 |
诚心经营 原盒原标 正品现货 价格美丽假一罚十 |
||||
INFINEON |
21+ |
TO252 |
8800 |
芯泽盛世只做原装,原装现货,支持实单 |
|||
INFINEON |
21+ |
TO-252 |
6000 |
十年信誉,只做原装,有挂就有现货! |
|||
UMW 友台 |
23+ |
TO-252 |
10000 |
原装正品，实单请联系 |
|||
INFINEON/IR |
23+ |
PG-TO252-3 (DPAK) |
86000 |
原装现货支持送检 |
|||
INFINEON/英飞凌 |
22+ |
TO-252 |
9500 |
只做原装正品假一赔十!正规渠道订货! |
|||
INFINEON/英飞凌 |
2021+ |
TO-252 |
18392 |
原装进口假一罚十 |
IRFR024芯片相关品牌
IRFR024规格书下载地址
IRFR024参数引脚图相关
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- l100
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- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRFS510
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- IRFS250
- IRFRC20
- IRFR825
- IRFR812
- IRFR48Z
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- IRFR410
- IRFR330
- IRFR325
- IRFR320
- IRFR310
- IRFR230
- IRFR224
- IRFR220
- IRFR214
- IRFR210
- IRFR120NTRLPBF
- IRFR120NPBF
- IRFR1205TRPBF
- IRFR1205TRLPBF
- IRFR1205PBF
- IRFR120
- IRFR110TRPBF-CUTTAPE
- IRFR110TRPBF
- IRFR110TRLPBF
- IRFR110PBF
- IRFR110
- IRFR1018ETRPBF
- IRFR1018EPBF
- IRFR1010ZPBF
- IRFR024TRPBF-CUTTAPE
- IRFR024TRPBF
- IRFR024PBF
- IRFR024NTRPBF-CUTTAPE
- IRFR024NTRPBF
- IRFR024NTRLPBF
- IRFR024NPBF
- IRFR020TRPBF
- IRFR020PBF
- IRFR020
- IRFR014TRPBF
- IRFR014PBF
- IRFR014
- IRFR012
- IRFR010PBF
- IRFR010
- IRFQ110
- IRFPS43N50KPBF
- IRFPS40N60KPBF
- IRFPS40N50LPBF
- IRFPS38N60LPBF
- IRFPS3810PBF
- IRFPS37N50APBF
- IRFPG50PBF
- IRFPG50
- IRFPG40PBF
- IRFPG40
- IRFPG30PBF
- IRFPG30
- IRFPF50PBF
- IRFPF50
- IRFPF40PBF
- IRFPF40
- IRFPF30
- IRFPE50PBF
- IRFPE50
- IRFPE40PBF
- IRFPE40
- IRFPE30PBF
- IRFPE30
- IRFPC60
- IRFPC50
- IRFPC48
- IRFPC40
- IRFPC30
- IRFP470
IRFR024数据表相关新闻
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属性参数值 商品目录场效应管(MOSFET) 漏源电压(Vdss)200V 连续漏极电流(Id)13A 功率(Pd)110W 导通电阻(RDS(on)@Vgs，Id)235mΩ10V，8A 阈值电压(Vgs(th)@Id)5.5V250μA 类型N沟道
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2021-3-12
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