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IRFR024价格
参考价格：￥1.5480
型号：IRFR024NPBF 品牌：INTERNATIONAL 备注：这里有IRFR024多少钱，2026年最近7天走势，今日出价，今日竞价，IRFR024批发/采购报价，IRFR024行情走势销售排行榜，IRFR024报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR024 | 丝印代码：IRFR024；N-Channel Enhancement Mode MOSFET Description The IRFR024NT uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =30 A RDS(ON) | EVVOSEMI 翊欧 |   | |
IRFR024 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | |
IRFR024 | Power MOSFET FEATURES • Dynamic dV/dt rating • Surface-mount (IRFR024, SiHFR024) • Straight lead (IRFU024, SiHFU024) • Available in tape and reel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99 | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFR024 | HEXFET POWER MOSFET Description Fifth Generation HEXFETs from International Rectifier provide the designed with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techni | IRF | | |
IRFR024 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFR024 | Power MOSFET 文件：1.16522 Mbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFR024 | Power MOSFET 文件：1.16522 Mbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFR024 | Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFR024 | HEXFET POWER MOSFET | INFINEON 英飞凌 | | |
IRFR024 | isc N-Channel MOSFET Transistor 文件：321.1 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRFR024 | Power MOSFET 文件：1.04466 Mbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
Power MOSFET FEATURES • Dynamic dV/dt rating • Surface-mount (IRFR024, SiHFR024) • Straight lead (IRFU024, SiHFU024) • Available in tape and reel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
MOSFET Description The D-PAK is designed for surface mounting using vapor phase, infrared,or wave soldering technigues. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 55V ID = 17A (VGS = 10V) RDS(ON) =75mW (VGS = 10V) | EVVOSEMI 翊欧 | | ||
Ultra Low On-Resistance Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ● Ultr | KERSEMI | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, | IRF | | ||
Ultra Low On-Resistance Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, | KERSEMI | | ||
MOSFET Description The D-PAK is designed for surface mounting using vapor phase, infrared,or wave soldering technigues. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 55V ID = 17A (VGS = 10V) RDS(ON) =75mW (VGS = 10V) | EVVOSEMI 翊欧 | | ||
The D-PAK is designed for surface mounting using vapor phase, infrared,or wave soldering technigues. Features VDS (V) = 55V ID = 17A (VGS = 10V) RDS(ON) =75mW (VGS = 10V) | UMW 友台半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.16522 Mbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.04466 Mbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
isc N-Channel MOSFET Transistor 文件：320.88 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor 文件：335.19 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
采用 D-Pak 封装的 55V 单 N 通道 IR MOSFET | INFINEON 英飞凌 | | ||
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A?? 文件：178.33 Kbytes Page：10 Pages | IRF | | ||
Ultra Low On-Resistance 文件：406.05 Kbytes Page：11 Pages | IRF | | ||
ULTRA LOW ON RESISTANCE 文件：406.05 Kbytes Page：11 Pages | IRF | | ||
Ultra Low On-Resistance 文件：4.00212 Mbytes Page：10 Pages | KERSEMI | | ||
ULTRA LOW ON RESISTANCE 文件：406.05 Kbytes Page：11 Pages | IRF | | ||
Ultra Low On-Resistance 文件：4.00212 Mbytes Page：10 Pages | KERSEMI | | ||
Ultra Low On-Resistance 文件：406.05 Kbytes Page：11 Pages | IRF | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.04371 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
HEXFET짰 Power MOSFET 文件：406.05 Kbytes Page：11 Pages | IRF | | ||
HEXFET Power MOSFET 文件：1.7836 Mbytes Page：10 Pages | IRF | | ||
Power MOSFET 文件：1.16522 Mbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.06651 Mbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.16522 Mbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.16522 Mbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.06651 Mbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.16522 Mbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.06651 Mbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.06651 Mbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.06651 Mbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
1.4cm (0.55-inch) NTSC/PAL Color LCD Panel Description The LCX024AKB is a 1.4cm diagonal active matrix TFT-LCD panel addressed by polycrystalline silicon super thin film transistors with built-in peripheral driving circuit. This panel provides full-color representation in NTSC/PAL mode. RGB dots are arranged in a delta pattern featuring h | SONYSony Corporation 索尼 | | ||
Error Amplifier ICs Erro r Amplifier ICs (SE series) SE005N Variable Voltage Detection Type Error Amplifier ICs SE-B3 | SANKEN 三垦 | | ||
HIGH VOLTAGE IGNITION COIL DRIVER POWER IC DESCRIPTION The VB024 is a high voltage integrated circuit made using SGS-THOMSON VIPower thecnology, with vertical current flow power darlington and logic level compatible driving circuit. The device performs the following functions: power stage for driving the primary side of the ignition coi | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL POWER MOSFET 文件：23.14 Kbytes Page：2 Pages | SEME-LAB | | ||
Silicon planar type 文件：49.05 Kbytes Page：4 Pages | PANASONIC 松下 | |
IRFR024产品属性
- 类型
描述
- 型号
IRFR024
- 功能描述
MOSFET N-Chan 60V 14 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2447 |
TO-252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IR |
23+ |
TO-252 |
7000 |
||||
最新 |
2000 |
原装正品现货 |
|||||
Vishay |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
IR |
24+ |
TO-252 |
1000 |
||||
IR |
25+ |
TO-252 |
35680 |
IR全新特价IRFR024TRPBF即刻询购立享优惠#长期有货 |
|||
23+ |
TO-252 |
65480 |
|||||
Infineon/英飞凌 |
20+ |
TO-252 |
9500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON |
22+ |
sot |
6600 |
正品渠道现货,终端可提供BOM表配单。 |
|||
NK/南科功率 |
2025 |
TO-252 |
3202 |
国产南科 |
IRFR024规格书下载地址
IRFR024参数引脚图相关
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- IRFR110TRPBF-CUTTAPE
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- IRFR024NTRPBF-CUTTAPE
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- IRFR020PBF
- IRFR020
- IRFR014TRPBF
- IRFR014PBF
- IRFR014
- IRFR012
- IRFR010PBF
- IRFR010
- IRFQ110
- IRFPS43N50KPBF
- IRFPS40N60KPBF
- IRFPS40N50LPBF
- IRFPS38N60LPBF
- IRFPS3810PBF
- IRFPS37N50APBF
- IRFPG50PBF
- IRFPG50
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- IRFPG30
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- IRFPF50
- IRFPF40PBF
- IRFPF40
- IRFPF30
- IRFPE50PBF
- IRFPE50
- IRFPE40PBF
- IRFPE40
- IRFPE30PBF
- IRFPE30
- IRFPC60
- IRFPC50
- IRFPC48
- IRFPC40
- IRFPC30
- IRFP470
IRFR024数据表相关新闻
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表面贴装型 N 通道 200 V 17A（Tc） 3W（Ta），140W（Tc） D-PAK（TO-252AA）
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联系人张生 电话19926428992 QQ1924037095
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属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
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2021-3-12
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