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位置：首页 > IC中文资料 > IRFR024

IRFR024价格

参考价格：￥1.5480

型号：IRFR024NPBF 品牌：INTERNATIONAL 备注：这里有IRFR024多少钱，2026年最近7天走势，今日出价，今日竞价，IRFR024批发/采购报价，IRFR024行情走势销售排行榜，IRFR024报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFR024

丝印代码：IRFR024；N-Channel Enhancement Mode MOSFET

Description The IRFR024NT uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =30 A RDS(ON)

EVVOSEMI

翊欧

IRFR024

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

IRFR024

Power MOSFET

FEATURES • Dynamic dV/dt rating • Surface-mount (IRFR024, SiHFR024) • Straight lead (IRFU024, SiHFU024) • Available in tape and reel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99

VISHAYVishay Siliconix

威世威世科技公司

IRFR024

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier provide the designed with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techni

IRF

IRFR024

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VISHAYVishay Siliconix

威世威世科技公司

IRFR024

Power MOSFET

Dynamic dV/dt rating\nSurface-mount (IRFR024, SiHFR024)\nStraight lead (IRFU024, SiHFU024);

VISHAYVishay Siliconix

威世威世科技公司

IRFR024

Power MOSFET

文件：1.16522 Mbytes Page：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFR024

Power MOSFET

文件：1.16522 Mbytes Page：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFR024

HEXFET POWER MOSFET

INFINEON

英飞凌

IRFR024

isc N-Channel MOSFET Transistor

文件：321.1 Kbytes Page：2 Pages

ISC

无锡固电

IRFR024

Power MOSFET

文件：1.04466 Mbytes Page：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFR024_V01

Power MOSFET

FEATURES • Dynamic dV/dt rating • Surface-mount (IRFR024, SiHFR024) • Straight lead (IRFU024, SiHFU024) • Available in tape and reel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99

VISHAYVishay Siliconix

威世威世科技公司

IRFR024N

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase, infrared,or wave soldering technigues. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 55V ID = 17A (VGS = 10V) RDS(ON) =75mW (VGS = 10V)

EVVOSEMI

翊欧

IRFR024N

采用 D-Pak 封装的 55V 单 N 通道 IR MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

INFINEON

英飞凌

IRFR024N

Ultra Low On-Resistance

Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ● Ultr

KERSEMI

IRFR024NPBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

KERSEMI

IRFR024NPBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

IRF

IRFR024NTR

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase, infrared,or wave soldering technigues. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 55V ID = 17A (VGS = 10V) RDS(ON) =75mW (VGS = 10V)

EVVOSEMI

翊欧

IRFR024NTR

The D-PAK is designed for surface mounting using vapor phase, infrared,or wave soldering technigues.

Features VDS (V) = 55V ID = 17A (VGS = 10V) RDS(ON) =75mW (VGS = 10V)

UMW

友台半导体

IRFR024PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VISHAYVishay Siliconix

威世威世科技公司

IRFR024PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

IRFR024R

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

IRFR024TR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

IRFR024TR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VISHAYVishay Siliconix

威世威世科技公司

IRFR024TRL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VISHAYVishay Siliconix

威世威世科技公司

IRFR024TRL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

IRFR024TRPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

IRFR024TRPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VISHAYVishay Siliconix

威世威世科技公司

IRFR024_10

Power MOSFET

文件：1.16522 Mbytes Page：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFR024_17

Power MOSFET

文件：1.04466 Mbytes Page：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFR024A

isc N-Channel MOSFET Transistor

文件：320.88 Kbytes Page：2 Pages

ISC

无锡固电

IRFR024N

N-Channel MOSFET Transistor

文件：335.19 Kbytes Page：2 Pages

ISC

无锡固电

IRFR024N

Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A??

文件：178.33 Kbytes Page：10 Pages

IRF

IRFR024NPBF

ULTRA LOW ON RESISTANCE

文件：406.05 Kbytes Page：11 Pages

IRF

IRFR024NPBF

Ultra Low On-Resistance

文件：4.00212 Mbytes Page：10 Pages

KERSEMI

IRFR024NPBF

Ultra Low On-Resistance

文件：406.05 Kbytes Page：11 Pages

IRF

IRFR024NPBF_15

ULTRA LOW ON RESISTANCE

文件：406.05 Kbytes Page：11 Pages

IRF

IRFR024NTRL

Ultra Low On-Resistance

文件：4.00212 Mbytes Page：10 Pages

KERSEMI

IRFR024NTRLPBF

Ultra Low On-Resistance

文件：406.05 Kbytes Page：11 Pages

IRF

IRFR024NTRPBF

N-Channel 60 V (D-S) MOSFET

文件：1.04371 Mbytes Page：8 Pages

VBSEMI

微碧半导体

IRFR024NTRPBF

HEXFET짰 Power MOSFET

文件：406.05 Kbytes Page：11 Pages

IRF

IRFR024PBF

HEXFET Power MOSFET

文件：1.7836 Mbytes Page：10 Pages

IRF

IRFR024PBF

Power MOSFET

文件：1.16522 Mbytes Page：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFR024PBF

Power MOSFET

文件：1.06651 Mbytes Page：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFR024TR

Power MOSFET

文件：1.16522 Mbytes Page：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFR024TRL

Power MOSFET

文件：1.16522 Mbytes Page：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFR024TRLPBF

Power MOSFET

文件：1.06651 Mbytes Page：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFR024TRPBF

Power MOSFET

文件：1.16522 Mbytes Page：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFR024TRPBFA

Power MOSFET

文件：1.06651 Mbytes Page：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFR024TRPBF-BE3AB

Power MOSFET

文件：1.06651 Mbytes Page：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFR024TRRPBFA

Power MOSFET

文件：1.06651 Mbytes Page：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

LCX024AKB

1.4cm (0.55-inch) NTSC/PAL Color LCD Panel

Description The LCX024AKB is a 1.4cm diagonal active matrix TFT-LCD panel addressed by polycrystalline silicon super thin film transistors with built-in peripheral driving circuit. This panel provides full-color representation in NTSC/PAL mode. RGB dots are arranged in a delta pattern featuring h

SONYSony Corporation

索尼

SE024N

Error Amplifier ICs

Erro r Amplifier ICs (SE series) SE005N Variable Voltage Detection Type Error Amplifier ICs SE-B3

SANKEN

三垦

VB024

HIGH VOLTAGE IGNITION COIL DRIVER POWER IC

DESCRIPTION The VB024 is a high voltage integrated circuit made using SGS-THOMSON VIPower thecnology, with vertical current flow power darlington and logic level compatible driving circuit. The device performs the following functions: power stage for driving the primary side of the ignition coi

STMICROELECTRONICS

意法半导体

IRFE024

N-CHANNEL POWER MOSFET

文件：23.14 Kbytes Page：2 Pages

SEME-LAB

MAZS024

Silicon planar type

文件：49.05 Kbytes Page：4 Pages

PANASONIC

松下

IRFR024产品属性

  • 类型

    描述

  • OPN：

    IRFR024NTRLPBF/IRFR024NTRPBF

  • Qualification：

    Non-Automotive

  • Package name：

    DPAK/DPAK

  • VDS max：

    55 V

  • RDS (on) @10V max：

    75 mΩ/75 mΩ

  • ID @25°C max：

    17 A/17 A

  • QG typ @10V：

    13.3 nC/13.3 nC

  • Polarity：

    N

  • VGS(th) min：

    2 V/2 V

  • VGS(th) max：

    4 V/4 V

  • VGS(th)：

    3 V/3 V

  • Technology：

    IR MOSFET™/IR MOSFET™

IRFR024供应商更多...

更新时间：2026-5-14 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
IRFR024NTRPBF
Infineon(英飞凌)
25+
TO-252-2(DPAK)
7589
全新原装现货,支持排单订货,可含税开票
询价
中天科工半导体（深圳）有限公司
IRFR024TRPBF
IR
25+
TO-252
35680
IR全新特价IRFR024TRPBF即刻询购立享优惠#长期有货
询价
深圳市豪迈兴电子有限公司
IRFR024NTRPBF
Infineon(英飞凌)
24+
TO-252-2(DPAK)
5002
只做原装现货假一罚十!价格最低!只卖原装现货
询价
深圳市科恒伟业电子有限公司
IRFR024NTRPBF
INFINEON
2430+
TO-252
8540
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市赛特兴科技有限公司
IRFR024NTRPBF
INFINEON
23+
TO-252
40000
正规渠道,只有原装!
询价
深圳市富利微电子科技有限公司
IRFR024NTRPBF
IR
25+
TO-252
20540
保证进口原装现货假一赔十
询价
深圳市拓亿芯电子有限公司
IRFR024NTRPBF
IR
25+
TO-252
22000
原装现货假一罚十
询价
深圳市明嘉莱科技有限公司
IRFR024NTRPBF
INFINEON
25+
TO-252
918000
明嘉莱只做原装正品现货
询价
深圳市恒达亿科技有限公司
IRFR024NTRPBF
INFINEON
25+
TO-252
6000
全新原装现货、诚信经营!
询价
深圳市祥瑞智科技有限公司
IRFR024NTRPBF
INFINEON
25+
TO-252
15000
原装正品!!!优势库存!0755-83210901
询价

IRFR024芯片相关品牌

IRFR024规格书下载地址

IRFR024参数引脚图相关

IRFR024数据表相关新闻

  • IRFR15N20DTRPBF

    表面贴装型 N 通道 200 V 17A（Tc） 3W（Ta），140W（Tc） D-PAK（TO-252AA）

    2022-10-19

  • IRFP4668PBF 全新原装现货

    IRFP4668PBF

    2022-6-27

  • IRFR13N20DTRPBF

    联系人张生 电话19926428992 QQ1924037095

    2021-10-12

  • IRFR13N20DTRPBF

    属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道

    2021-10-12

  • IRFP460PBF

    IRFP460PBF

    2021-5-20

  • IRFP460PBF 原装正品 现货供应

    IRFP460PBF 原装现货供应 0755-28892389 13713856319 QQ:2639752116

    2021-3-12

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