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IRFR010价格
参考价格:¥3.8129
型号:IRFR010PBF 品牌:Vishay 备注:这里有IRFR010多少钱,2026年最近7天走势,今日出价,今日竞价,IRFR010批发/采购报价,IRFR010行情走势销售排行榜,IRFR010报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR010 | Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d | VISHAYVishay Siliconix 威世威世科技公司 | ||
IRFR010 | Power MOSFET FEATURES • Low drive current • Surface-mount • Fast switching • Ease of paralleling • Excellent temperature stability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The power MOSFET technology is the key to Vishay’s advanced lin | VISHAYVishay Siliconix 威世威世科技公司 | ||
IRFR010 | N-CHANNEL POWER MOSFET
| SAMSUNG 三星 | ||
IRFR010 | AVALANCHE AND dv/dt RATED
| IRF | ||
IRFR010 | Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d | KERSEMI | ||
IRFR010 | Power MOSFET Low drive current\nSurface-mount\nFast switching; | VISHAYVishay Siliconix 威世威世科技公司 | ||
IRFR010 | AVALANCHE AND dv/dt RATED | INFINEON 英飞凌 | ||
IRFR010 | isc N-Channel MOSFET Transistor 文件:320.94 Kbytes Page:2 Pages | ISC 无锡固电 | ||
Power MOSFET FEATURES • Low drive current • Surface-mount • Fast switching • Ease of paralleling • Excellent temperature stability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The power MOSFET technology is the key to Vishay’s advanced lin | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d | KERSEMI | |||
Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:325.95 Kbytes Page:11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:325.95 Kbytes Page:11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:325.95 Kbytes Page:11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:325.95 Kbytes Page:11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:325.95 Kbytes Page:11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
4.0A GLASS PASSIVATED BRIDGE RECTIFIER Features ● Glass Passivated Die Construction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability ● Ideal for Printed Circuit Boards | WTE Won-Top Electronics | |||
SCRs General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga | TECCOR | |||
SCRs General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga | TECCOR | |||
SCRs General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga | TECCOR | |||
SCRs General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga | TECCOR |
IRFR010产品属性
- 类型
描述
- 型号
IRFR010
- 功能描述
MOSFET N-Chan 60V 7.7 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
23+ |
SOT252 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
FSC |
2023+ |
TO-252 |
5800 |
进口原装,现货热卖 |
|||
IR |
2023+ |
3000 |
进口原装现货 |
||||
IR |
25+ |
TO-252 |
35675 |
IR全新特价IRFR010TRPBF即刻询购立享优惠#长期有货 |
|||
IR |
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
|||
VBSEMI/微碧半导体 |
25+ |
TO252 |
90000 |
全新原装现货 |
|||
IR |
26+ |
TO-252 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
VB |
25+ |
DPAK |
10000 |
原装现货假一罚十 |
|||
IR |
22+ |
TO-252 |
8000 |
原装正品支持实单 |
IRFR010芯片相关品牌
IRFR010规格书下载地址
IRFR010参数引脚图相关
- l101
- l100
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- km710
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- k2055
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- jumper
- jtag接口
- jk触发器
- j111
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- isd1420
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- IRFR120
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- IRFR1018ETRPBF
- IRFR1018EPBF
- IRFR1010ZPBF
- IRFR024TRPBF-CUTTAPE
- IRFR024TRPBF
- IRFR024PBF
- IRFR024NTRPBF-CUTTAPE
- IRFR024NTRPBF
- IRFR024NTRLPBF
- IRFR024NPBF
- IRFR024
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- IRFPS3810PBF
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- IRFPG50PBF
- IRFPG50
- IRFPG40PBF
- IRFPG40
- IRFPG30PBF
- IRFPG30
- IRFPF50PBF
- IRFPF50
- IRFPF40PBF
- IRFPF40
- IRFPF30
- IRFPE50PBF
- IRFPE50
- IRFPE40PBF
- IRFPE40
- IRFPE30PBF
- IRFPE30
- IRFPC60PBF
- IRFPC60LCPBF
- IRFPC60
- IRFPC50PBF
- IRFPC50LCPBF
- IRFPC50APBF
- IRFPC50
- IRFPC48
- IRFPC40
- IRFPC30
- IRFP470
- IRFP462
- IRFP460
- IRFP453
- IRFP452
IRFR010数据表相关新闻
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属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs,Id) 235mΩ 10V,8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
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IRFP460PBF 原装现货供应 0755-28892389 13713856319 QQ:2639752116
2021-3-12
DdatasheetPDF页码索引
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