-60V P -Channel Enhancement Mode MOSFET

General Features VDS = -60V ID =-10 A RDS(ON)

-60V P -Channel Enhancement Mode MOSFET

Description The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -60V ID =-10 A RDS(ON)

ULTRA LOW ON-RESISTANCE

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Advanced process Technolgy

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P-Channel 60 V (D-S) MOSFET

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High Current RF Chokes

Special Features • Very high current capacity • Low DCR • Ferrite core • VW-1 rated shrink tubing to cover winding • Fixed lead spacing • Operating temperature -55 to +105°C • Current to cause 5 maximum inductance drop or 35°C maximum temperature rise

450 MHz to 6000Mhz TruPwr Detector

GENERAL DESCRIPTION The ADL5505 is a TruPwr™ mean-responding (true rms) power detector for use in high frequency receiver and transmitter signal chains from 450 MHz to 6000 MHz. Requiring only a single supply between 2.5 V and 3.3 V, the detector draws less than 1.8 mA. The input is internally ac

450 MHz to 6000 MHz TruPwr Detector

FEATURES True rms response detector Excellent temperature stability ±0.25 dB rms detection accuracy vs. temperature Over 35 dB input power dynamic range, inclusive of crest factor RF bandwidths from 450 MHz to 6000 MHz 500 Ω input impedance Single-supply operation: 2.5 V to 3.3 V Low power

J5800-001 INSERTION TOOL PRODUCT SPECIFICATION

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High Current Chokes

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