位置：首页 > IC中文资料第7286页 > BF99
BF99价格
参考价格：￥0.3900
型号：BF990A 品牌：NXP/PHILIPS 备注：这里有BF99多少钱，2025年最近7天走势，今日出价，今日竞价，BF99批发/采购报价，BF99行情走势销售排行榜，BF99报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-channel dual-gate MOS-FET DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such a | Philips 飞利浦 |   | ||
N-channel dual-gate MOS-FET DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • VHF applications such | Philips 飞利浦 | | ||
N-channel dual-gate MOS-FET | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Silicon N-channel dual gate MOS-FET DESCRIPTION Depletion type field-effect transistor in a plastic micro-miniature SOT143B package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • VHF applicatio | Philips 飞利浦 | | ||
Silicon N-channel dual gate MOS-FET | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FET DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • VHF a | Philips 飞利浦 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance Applications Input- and mixer stages especially VHF TV-tuners. | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners) ● For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners | SIEMENS 西门子 | | ||
N-channel dual-gate MOS-FET DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • VHF a | Philips 飞利浦 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance Applications Input- and mixer stages especially VHF TV-tuners. | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners) ● For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners | SIEMENS 西门子 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance Applications Input- and mixer stages especially VHF TV-tuners. | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance Applications Input- and mixer stages especially VHF TV-tuners. | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • High cross modulation performance • Low noise figure • High AGC-range • Low feedback capacitance • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • Input- and mixer stages especially for | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • High cross modulation performance • Low noise figure • High AGC-range • Low feedback capacitance • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • Input- and mixer stages especially for | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • High cross modulation performance • Low noise figure • High AGC-range • Low feedback capacitance • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • Input- and mixer stages especially for | VishayVishay Siliconix 威世威世科技公司 | | ||
N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such a | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure) Silicon N Channel MOSFET Tetrode ● For input stages in UHF TV tuners ● High transconductance ● Low noise figure | SIEMENS 西门子 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features ● Integrated gate protection diodes ● Low noise figure ● Low feedback capacitance ● High cross modulation performance ● Low input capacitance ● High AGC-range Applications Input and mixer stages in UHF tuner. | Temic | | ||
N-channel dual-gate MOS-FET DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such a | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such a | VishayVishay Siliconix 威世威世科技公司 | | ||
N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such a | VishayVishay Siliconix 威世威世科技公司 | | ||
N-channel dual-gate MOS-FET DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source • Integrated drain resistance to suppre | Philips 飞利浦 | | ||
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) Silicon N Channel MOSFET Tetrode ● Integrated suppression network against spurious VHF oscillations ● For VHF applications, especially in TV tuners with extended VHF band, e. g. in CATV tuners | SIEMENS 西门子 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) Features ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz | SIEMENS 西门子 | | ||
Silicon N-Channel MOSFET Tetrode Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz | Infineon 英飞凌 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Silicon N-Channel MOSFET Tetrode Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz | Infineon 英飞凌 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 | SIEMENS 西门子 | | ||
Silicon N-Channel MOSFET Tetrode Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz | Infineon 英飞凌 | | ||
N-channel dual-gate MOS-FET DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES • High forward | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications | SIEMENS 西门子 | | ||
Silicon N-Channel MOSFET Triode Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications | Infineon 英飞凌 | | ||
N-channel dual-gate MOS-FET 文件：232.96 Kbytes Page：7 Pages | JMNIC 锦美电子 | | ||
N-channel dual-gate MOS-FET 文件：232.96 Kbytes Page：7 Pages | JMNIC 锦美电子 | | ||
Silicon N-channel dual gate MOS-FET 文件：249.65 Kbytes Page：9 Pages | JMNIC 锦美电子 | | ||
封装/外壳：TO-253-4，TO-253AA 包装：托盘 描述：MOSFET NCH DUAL GATE 20V SOT143B 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
Silicon N-channel dual gate MOS-FET 文件：249.65 Kbytes Page：9 Pages | JMNIC 锦美电子 | | ||
Silicon N-channel dual gate MOS-FET 文件：249.65 Kbytes Page：9 Pages | JMNIC 锦美电子 | | ||
Silicon N Channel MOSFET Tetrode | Infineon 英飞凌 | | ||
Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners) | Infineon 英飞凌 | | ||
N-channel dual-gate MOS-FET 文件：37.91 Kbytes Page：5 Pages | JMNIC 锦美电子 | | ||
封装/外壳：TO-253-4，TO-253AA 包装：托盘 描述：MOSFET NCH DUAL GATE 20V SOT143B 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FET 文件：37.91 Kbytes Page：5 Pages | JMNIC 锦美电子 | | ||
N-channel dual-gate MOS-FET 文件：37.91 Kbytes Page：5 Pages | JMNIC 锦美电子 | |
BF99产品属性
- 类型
描述
- 型号
BF99
- 制造商
PHILIPS
- 制造商全称
NXP Semiconductors
- 功能描述
N-channel dual-gate MOS-FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
Nexperia/安世 |
25+ |
SOT143 |
5400 |
原装正品,假一罚十! |
|||
恩XP |
24+ |
SOT-143 |
880000 |
明嘉莱只做原装正品现货 |
|||
Nexperia |
25+ |
N/A |
20000 |
||||
恩XP |
24+ |
SOT143 |
6000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
恩XP |
24+ |
N/A |
6000 |
原厂原装，价格优势，欢迎洽谈！ |
|||
恩XP |
22+ |
SOT-143 |
20000 |
只做原装 |
|||
PHI |
SOT-143 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
恩XP |
23+ |
标准封装 |
6000 |
正规渠道,只有原装! |
|||
恩XP |
24+ |
NA/ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
BF99芯片相关品牌
BF99规格书下载地址
BF99参数引脚图相关
- c9012
- c901
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- BF998WR,115
- BF998RB
- BF998RA
- BF998R,215
- BF998R
- BF998E6327
- BF998B
- BF998A
- BF998,215
- BF998
- BF997
- BF996SB
- BF996SA-GS08
- BF996SA
- BF996S,215
- BF996S
- BF995FD-GS08
- BF995FD
- BF995B
- BF995A
- BF995
- BF994SR
- BF994SB
- BF994SA
- BF994S,215-CUTTAPE
- BF994S,215
- BF994S
- BF994
- BF992,215
- BF992
- BF991,215
- BF991
- BF990A
- BF989
- BF988
- BF987
- BF9864A
- BF982
- BF981
- BF980A
- BF980
- BF979S
- BF979
- BF970
- BF968
- BF967
- BF966SB
- BF966SA
- BF966S
- BF964S
- BF964
- BF961B
- BF961A
- BF909WR
- BF909R,215
- BF909R
- BF909AR
- BF909
- BF908WR,115
- BF908R,215
- BF908,215
- BF904R
- BF904,215
- BF904
- BF9
- BF862,235
- BF862,215-CUTTAPE
- BF862,215
- BF862
- BF861C,215
- BF861B,215
- BF861B
- BF861A,215-CUTTAPE
BF99数据表相关新闻
BFG235
进口代理
2022-11-12BFC233920474
BFC233920474
2022-10-13BF7612CM28，40k现货，批次21+
BF7612CM28，40k现货，批次21+
2021-11-18BF7612CM28，BYD，40K，21+
BF7612CM28，BYD，40K，21+
2021-11-10BF862215
JFET - 25 V 射频结栅场效应晶体管(RF JFET)晶体管 , SMD/SMT 射频结栅场效应晶体管(RF JFET)晶体管 , JFET 射频结栅场效应晶体管(RF JFET)晶体管 , GaN SiC SMD/SMT 射频结栅场效应晶体管(RF JFET)晶体管 , JFET N-Channel 射频结栅场效应晶体管(RF JFET)晶体管 , MESFET 射
2020-8-5BF998，现货销售，只售原装，兴中扬电子
BF998，现货销售，只售原装，兴中扬电子
2019-11-30
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
