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BF99价格
参考价格：￥0.3900
型号：BF990A 品牌：NXP/PHILIPS 备注：这里有BF99多少钱，2024年最近7天走势，今日出价，今日竞价，BF99批发/采购报价，BF99行情走势销售排行榜，BF99报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-channel dual-gate MOS-FET DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES •Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •RFapplicationssucha | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  |   | |
N-channel dual-gate MOS-FET DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES •Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •VHFapplicationssuch | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
N-channel dual-gate MOS-FET DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES •Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •VHFapplicationssuch | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Silicon N-channel dual gate MOS-FET DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicro-miniatureSOT143Bpackagewithsourceandsubstrateinterconnected. Thetransistorisprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •VHFapplicatio | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Silicon N-channel dual gate MOS-FET DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicro-miniatureSOT143Bpackagewithsourceandsubstrateinterconnected. Thetransistorisprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •VHFapplicatio | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channel dual-gate MOS-FET DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsource andsubstrate. FEATURES •Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •VHFa | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features Integratedgateprotectiondiodes Highcrossmodulationperformance Lownoisefigure HighAGC-range Lowfeedbackcapacitance Lowinputcapacitance Applications Input-andmixerstagesespeciallyVHFTV-tuners. | VishayVishay Siliconix 威世科技威世科技半导体 |  | | |
Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners) ●ForVHFapplications,especiallyforinputandmixerstageswithawidetuningrange,e.g.inCATVtuners | SIEMENSSiemens Ltd 西门子德国西门子股份公司 |  | | |
N-channel dual-gate MOS-FET DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsource andsubstrate. FEATURES •Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •VHFa | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features Integratedgateprotectiondiodes Highcrossmodulationperformance Lownoisefigure HighAGC-range Lowfeedbackcapacitance Lowinputcapacitance Applications Input-andmixerstagesespeciallyVHFTV-tuners. | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners) ●ForVHFapplications,especiallyforinputandmixerstageswithawidetuningrange,e.g.inCATVtuners | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features Integratedgateprotectiondiodes Highcrossmodulationperformance Lownoisefigure HighAGC-range Lowfeedbackcapacitance Lowinputcapacitance Applications Input-andmixerstagesespeciallyVHFTV-tuners. | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features Integratedgateprotectiondiodes Highcrossmodulationperformance Lownoisefigure HighAGC-range Lowfeedbackcapacitance Lowinputcapacitance Applications Input-andmixerstagesespeciallyVHFTV-tuners. | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features •Integratedgateprotectiondiodes •Highcrossmodulationperformance •Lownoisefigure •HighAGC-range •Lowfeedbackcapacitance •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications •Input-andmixerstagesespeciallyfor | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features •Integratedgateprotectiondiodes •Highcrossmodulationperformance •Lownoisefigure •HighAGC-range •Lowfeedbackcapacitance •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications •Input-andmixerstagesespeciallyfor | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features •Integratedgateprotectiondiodes •Highcrossmodulationperformance •Lownoisefigure •HighAGC-range •Lowfeedbackcapacitance •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications •Input-andmixerstagesespeciallyfor | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES •Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •RFapplicationssucha | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure) SiliconNChannelMOSFETTetrode ●ForinputstagesinUHFTVtuners ●Hightransconductance ●Lownoisefigure | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features ●Integratedgateprotectiondiodes ●Lownoisefigure ●Lowfeedbackcapacitance ●Highcrossmodulationperformance ●Lowinputcapacitance ●HighAGC-range Applications InputandmixerstagesinUHFtuner. | TemicTEMIC 杰驰电子 |  | | |
N-channel dual-gate MOS-FET DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES •Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •RFapplicationssucha | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES •Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •RFapplicationssucha | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES •Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •RFapplicationssucha | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-channel dual-gate MOS-FET DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES •Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource •Integrateddrainresistancetosuppre | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) SiliconNChannelMOSFETTetrode ●IntegratedsuppressionnetworkagainstspuriousVHFoscillations ●ForVHFapplications,especiallyinTVtunerswithextendedVHFband,e.g.inCATVtuners | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) Features ●Short-channeltransistorwithhighS/Cqualityfactor ●Forlow-noise,gain-controlledinputstagesupto1GHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
Silicon N-Channel MOSFET Tetrode SiliconN_ChannelMOSFETTetrode •Short-channeltransistorwithhighS/Cqualityfactor •Forlow-noise,gain-controlledinputstageupto1GHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Silicon N-Channel MOSFET Tetrode SiliconN_ChannelMOSFETTetrode •Short-channeltransistorwithhighS/Cqualityfactor •Forlow-noise,gain-controlledinputstageupto1GHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) •Short-channeltransistorwithhighS/Cqualityfactor •Forlownoise,gain-controlledinputstagesupto1GHzReversepinoutversionofBF998 | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
Silicon N-Channel MOSFET Tetrode SiliconN_ChannelMOSFETTetrode •Short-channeltransistorwithhighS/Cqualityfactor •Forlow-noise,gain-controlledinputstageupto1GHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-channel dual-gate MOS-FET DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicrominiatureSOT343Rpackagewithsourceandsubstrateinterconnected.Thetransistorisprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES •Highforward | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) SiliconN-ChannelMOSFETTriode Forhigh-frequencystagesupto300MHzpreferablyinFMapplications | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
Silicon N-Channel MOSFET Triode SiliconN-ChannelMOSFETTriode Forhigh-frequencystagesupto300MHzpreferablyinFMapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-channel dual-gate MOS-FET 文件：232.96 Kbytes Page：7 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 |  | | |
N-channel dual-gate MOS-FET 文件：232.96 Kbytes Page：7 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | | |
Silicon N-channel dual gate MOS-FET 文件：249.65 Kbytes Page：9 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | | |
封装/外壳：TO-253-4，TO-253AA 包装：托盘 描述：MOSFET NCH DUAL GATE 20V SOT143B 分立半导体产品 晶体管 - FET，MOSFET - 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Silicon N-channel dual gate MOS-FET 文件：249.65 Kbytes Page：9 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | | |
Silicon N-channel dual gate MOS-FET 文件：249.65 Kbytes Page：9 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | | |
N-channel dual-gate MOS-FET 文件：37.91 Kbytes Page：5 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | | |
封装/外壳：TO-253-4，TO-253AA 包装：托盘 描述：MOSFET NCH DUAL GATE 20V SOT143B 分立半导体产品 晶体管 - FET，MOSFET - 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channel dual-gate MOS-FET 文件：37.91 Kbytes Page：5 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | | |
N-channel dual-gate MOS-FET 文件：37.91 Kbytes Page：5 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | | |
Silicon N Channel MOSFET Tetrode (For input and mixer stages in FM and VHF TV tuners) 文件：175.84 Kbytes Page：10 Pages | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
N-channel dual-gate MOS-FET 文件：37.31 Kbytes Page：5 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | |
BF99产品属性
- 类型
描述
- 型号
BF99
- 制造商
PHILIPS
- 制造商全称
NXP Semiconductors
- 功能描述
N-channel dual-gate MOS-FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
2020+ |
SOT143 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
NXP(恩智浦) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
NEXPERIA/安世 |
22+ |
SOT143 |
600000 |
航宇科工半导体-央企优秀战略合作伙伴! |
|||
NXP |
22+ |
NA |
45000 |
加我QQ或微信咨询更多详细信息, |
|||
NXP |
2339+ |
N/A |
21322 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
PHI |
2020+ |
SOT143 |
248 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
PHILIPS |
SOT-143 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
NXP(恩智浦) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
NXP |
22+ |
SOP |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
nxp |
22+ |
500000 |
行业低价,代理渠道 |
BF99芯片相关品牌
BF99规格书下载地址
BF99参数引脚图相关
- c9012
- c901
- C80
- c62f
- c430p
- c3055
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- c2073
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- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- BF998WR,115
- BF998RB
- BF998RA
- BF998R,215
- BF998R
- BF998E6327
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- BF998A
- BF998,215
- BF998
- BF997
- BF996SB
- BF996SA-GS08
- BF996SA
- BF996S,215
- BF996S
- BF995FD-GS08
- BF995FD
- BF995B
- BF995A
- BF995
- BF994SR
- BF994SB
- BF994SA
- BF994S,215-CUTTAPE
- BF994S,215
- BF994S
- BF994
- BF992,215
- BF992
- BF991,215
- BF991
- BF990A
- BF989
- BF988
- BF987
- BF9864A
- BF982
- BF981
- BF980A
- BF980
- BF979S
- BF979
- BF970
- BF968
- BF967
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- BF966SA
- BF966S
- BF964S
- BF964
- BF961B
- BF961A
- BF909WR
- BF909R,215
- BF909R
- BF909AR
- BF909
- BF908WR,115
- BF908R,215
- BF908,215
- BF904R
- BF904,215
- BF904
- BF9
- BF862,235
- BF862,215-CUTTAPE
- BF862,215
- BF862
- BF861C,215
- BF861B,215
- BF861B
- BF861A,215-CUTTAPE
BF99数据表相关新闻
BFG235
进口代理
2022-11-12BFC233920474
BFC233920474
2022-10-13BF7612CM28，40k现货，批次21+
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JFET-25V射频结栅场效应晶体管(RFJFET)晶体管,SMD/SMT射频结栅场效应晶体管(RFJFET)晶体管,JFET射频结栅场效应晶体管(RFJFET)晶体管,GaNSiCSMD/SMT射频结栅场效应晶体管(RFJFET)晶体管,JFETN-Channel射频结栅场效应晶体管(RFJFET)晶体管,MESFET射
2020-8-5BF998，现货销售，只售原装，兴中扬电子
BF998，现货销售，只售原装，兴中扬电子
2019-11-30
DdatasheetPDF页码索引
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- P3
- P4
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