N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such a

Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure)

Silicon N Channel MOSFET Tetrode ● For input stages in UHF TV tuners ● High transconductance ● Low noise figure

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features ● Integrated gate protection diodes ● Low noise figure ● Low feedback capacitance ● High cross modulation performance ● Low input capacitance ● High AGC-range Applications Input and mixer stages in UHF tuner.

N-channel dual-gate MOS-FET

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such a

RF Manual 16th edition

N-channel dual-gate MOS-FET

文件：37.31 Kbytes Page：5 Pages

N-channel dual-gate MOSFET

N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such a

N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such a

封装/外壳：TO-253-4，TO-253AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH 20V 30MA SOT143B 分立半导体产品 晶体管 - FET，MOSFET - 射频

N-channel dual-gate MOS-FET

文件：37.31 Kbytes Page：5 Pages

N-channel dual-gate MOS-FET

文件：37.31 Kbytes Page：5 Pages

Using the Fairchild FST Bus Switch as a 5V to 3V Translator

Introduction Fairchild FST Bus Switches can be used for bi-directional translators. They can interface 5V components to 3V components with negligible propagation delay (tPD ≤ 250ps) and minimal power dissipation (ICC ≤ 10µA). As the number of systems that interface between 5V and 3.3V levels inc