N-channel dual-gate MOS-FET

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source • Integrated drain resistance to suppre

Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations)

Silicon N Channel MOSFET Tetrode ● Integrated suppression network against spurious VHF oscillations ● For VHF applications, especially in TV tuners with extended VHF band, e. g. in CATV tuners

Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations)

Single/Dual/Quad, Ultra-High-Speed, 3V/5V,Beyond-the-Rails Comparators

General Description The MAX961–MAX964/MAX997/MAX999 are low-power, ultra-high-speed comparators with internal hysteresis. These devices are optimized for single +3V or +5V operation. The input common-mode range extends 100mV Beyond-the-Rails™, and the outputs can sink or source 4mA to within 0.5

Integrated Circuit Quad Operational Amplifier

Description: The NTE997 is a monolithic quad operational amplifier in a 14–Lead DIP type package consisting of four independent high gain, internally compensated operational amplifiers. The specifically designed low noise input transistors allow the NTE997 to be used in low noise signal processin

3.0 mm Blue Series

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