N-channel dual-gate MOS-FET

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source • Integrated drain resistance to suppre

Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations)

Silicon N Channel MOSFET Tetrode ● Integrated suppression network against spurious VHF oscillations ● For VHF applications, especially in TV tuners with extended VHF band, e. g. in CATV tuners

ELECTROVALVULA SOLENOIDE DIRECCIONAL 12VDC NORMALMENTE CERRADA 0.02MPa-0.8MPa

DESCRIPCIÓN Electroválvula solenoide direccional 12VDC normalmente cerrada 0.02MPa-0.8MPa

High-frequency, integral cable accelerometers

Key features • Available models: 997 (8-32 captive screw) and 997-M4 (M4 captive screw) • High amplitude range • Manufactured in ISO 9001 facility

Blade Terminal & Special Purpose Fuses - Low Voltage

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A broad portfolio of high performance, best-in-class Serial Memory Products to meet all your design requirements.

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AQUA PROOF ORION S2047N-BG45WH IMP FSC

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