DESCRIPTION

Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.

FEATURES

• High forward transfer admittance

• Short channel transistor with high forward transfer admittance to input capacitance ratio

• Low noise gain controlled amplifier up to 1 GHz.

APPLICATIONS

• VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment.