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BF998价格

参考价格：￥0.2300

型号：BF998 品牌：SIEMENS 备注：这里有BF998多少钱，2025年最近7天走势，今日出价，今日竞价，BF998批发/采购报价，BF998行情走势销售排行榜，BF998报价。

型号	功能描述	生产厂家企业	LOGO
BF998	Silicon N-Channel MOSFET Tetrode Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz	Infineon 英飞凌	Infineon
BF998	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC	VishayVishay Siliconix 威世科技	Vishay
BF998	RF Manual 16th edition	ETC 知名厂家	ETC
BF998	Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) Features ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz	SIEMENS 西门子	SIEMENS
BF998	射频 MOSFET 和有源偏置控制器	Infineon 英飞凌	Infineon
BF998	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages	VishayVishay Siliconix 威世科技	Vishay
BF998	Silicon N_Channel MOSFET Tetrode 文件：93.08 Kbytes Page：9 Pages	Infineon 英飞凌	Infineon
BF998	Silicon N-channel dual-gate MOS-FETs 文件：114.27 Kbytes Page：12 Pages	Philips 飞利浦	Philips
BF998A	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC	VishayVishay Siliconix 威世科技	Vishay
BF998B	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC	VishayVishay Siliconix 威世科技	Vishay
BF998R	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC	VishayVishay Siliconix 威世科技	Vishay
BF998R	Silicon N-Channel MOSFET Tetrode Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz	Infineon 英飞凌	Infineon
BF998R	RF Manual 16th edition	ETC 知名厂家	ETC
BF998RA	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC	VishayVishay Siliconix 威世科技	Vishay
BF998RAW	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC	VishayVishay Siliconix 威世科技	Vishay
BF998RB	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC	VishayVishay Siliconix 威世科技	Vishay
BF998RBW	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC	VishayVishay Siliconix 威世科技	Vishay
BF998RW	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC	VishayVishay Siliconix 威世科技	Vishay
BF998W	Silicon N-Channel MOSFET Tetrode Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz	Infineon 英飞凌	Infineon
BF998W	Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998	SIEMENS 西门子	SIEMENS
BF998WR	N-channel dual-gate MOS-FET DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES • High forward	Philips 飞利浦	Philips
BF998WR	RF Manual 16th edition	ETC 知名厂家	ETC
BF998,235	封装/外壳：TO-253-4，TO-253AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：MOSFET N-CH 12V 30MA SOT143 分立半导体产品晶体管 - FET，MOSFET - 射频	ETC 知名厂家	ETC
BF998_07	Silicon N_Channel MOSFET Tetrode 文件：93.08 Kbytes Page：9 Pages	Infineon 英飞凌	Infineon
BF998_08	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages	VishayVishay Siliconix 威世科技	Vishay
BF998_15	Silicon N-channel dual-gate 文件：85.28 Kbytes Page：12 Pages	JMNIC 锦美电子	JMNIC
BF998_2015	Silicon N-channel dual-gate MOS-FETs 文件：85.28 Kbytes Page：12 Pages	JMNIC 锦美电子	JMNIC
BF998A	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages	VishayVishay Siliconix 威世科技	Vishay
BF998A-GS08	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages	VishayVishay Siliconix 威世科技	Vishay
BF998E6327HTSA1	封装/外壳：TO-253-4，TO-253AA 包装：托盘描述：MOSFET N-CH 12V 200MA SOT-143 分立半导体产品晶体管 - FET，MOSFET - 射频	Infineon 英飞凌	Infineon
BF998R	Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) 文件：33.45 Kbytes Page：2 Pages	SIEMENS 西门子	SIEMENS
BF998R	N-channel dual-gate MOSFET	ETC 知名厂家	ETC
BF998R	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages	VishayVishay Siliconix 威世科技	Vishay
BF998R	Silicon N_Channel MOSFET Tetrode 文件：93.08 Kbytes Page：9 Pages	Infineon 英飞凌	Infineon
BF998R	Silicon N-channel dual-gate MOS-FETs 文件：114.27 Kbytes Page：12 Pages	Philips 飞利浦	Philips
BF998RA	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages	VishayVishay Siliconix 威世科技	Vishay
BF998RA-GS08	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages	VishayVishay Siliconix 威世科技	Vishay
BF998RAW	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages	VishayVishay Siliconix 威世科技	Vishay
BF998RAW-GS08	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages	VishayVishay Siliconix 威世科技	Vishay
BF998RBW	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages	VishayVishay Siliconix 威世科技	Vishay
BF998RBW-GS08	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages	VishayVishay Siliconix 威世科技	Vishay
BF998RW	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages	VishayVishay Siliconix 威世科技	Vishay
BF998WR	N-channel dual-gate MOS-FET	ETC 知名厂家	ETC
BF998WR	N-channel dual-gate MOS-FET 文件：82.78 Kbytes Page：12 Pages	JMNIC 锦美电子	JMNIC
BF998WR_15	N-channel dual-gate MOS-FET 文件：82.78 Kbytes Page：12 Pages	JMNIC 锦美电子	JMNIC
BF998WR_2015	N-channel dual-gate MOS-FET 文件：82.78 Kbytes Page：12 Pages	JMNIC 锦美电子	JMNIC
AS998	IC intended for use as a PWM controller 文件：30.91 Kbytes Page：6 Pages	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商	ETC1

BF998产品属性

类型
描述
型号
BF998
制造商
NXP Semiconductors
功能描述
MOSFET N RF DUAL-GATE SOT-143
制造商
NXP Semiconductors
功能描述
MOSFET, N, RF, DUAL-GATE, SOT-143
制造商
VISHAY SEMICONDUCTOR
功能描述
Trans MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) SOT-143
制造商
Infineon Technologies AG
功能描述
RF MOSFET N-Channel 12V 0.03A SOT143
制造商
NXP Semiconductors
功能描述
RF MOSFET N-Ch 12V 30mA Dual Gate SOT143

BF998供应商更多...

更新时间：2025-9-22 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	BF998R	恩XP	24+	标准封装	9048	全新原装正品/价格优惠/质量保障	询价
深圳市凌旭科技有限公司	BF998	INFINEON	2016+	SOT143	6000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市科恒伟业电子有限公司	BF998RE6327	INFINEON	24+	VQFN	7850	只做原装正品现货或订货假一赔十!	询价
深圳市科芯源微电子有限公司	BF998	INFINEON/英飞凌	23+	SOT143	100586	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
深圳市明嘉莱科技有限公司	BF998E6327	INFINEON/英飞凌	24+	SOT143	159826	明嘉莱只做原装正品现货	询价
深圳市华睿芯科技有限公司	BF998	infineon	24+	SOT143	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市联世界科技有限公司	BF998	INFINEON	24+/25+		3163	原装正品现货库存价优	询价
千层芯半导体(深圳)有限公司	BF998	PHI	24+	SMD	5500	长期供应原装现货实单可谈	询价
中天科工半导体（深圳）有限公司	BF998RE6327	INFINEON/英飞凌	25+	SOT143	32000	INFINEON/英飞凌全新特价BF998RE6327即刻询购立享优惠#长期有货	询价
深圳市正迈科技有限公司	BF998E6327	INFINEON	23+	原封 □	21500	INFINEON优势 /原装现货长期供应现货支持	询价

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BF998规格书下载地址

BF998参数引脚图相关

BF998数据表相关新闻

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进口代理
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BFC233920474
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BF7612CM28，40k现货，批次21+
BF7612CM28，40k现货，批次21+
2021-11-18
BF7612CM28，BYD，40K，21+
BF7612CM28，BYD，40K，21+
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JFET - 25 V 射频结栅场效应晶体管(RF JFET)晶体管 , SMD/SMT 射频结栅场效应晶体管(RF JFET)晶体管 , JFET 射频结栅场效应晶体管(RF JFET)晶体管 , GaN SiC SMD/SMT 射频结栅场效应晶体管(RF JFET)晶体管 , JFET N-Channel 射频结栅场效应晶体管(RF JFET)晶体管 , MESFET 射
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BF998，现货销售，只售原装，兴中扬电子
2019-11-30

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BF998价格

BF998产品属性

BF998供应商更多...

BF998芯片相关品牌

BF998规格书下载地址

BF998参数引脚图相关

BF998数据表相关新闻

BFG235

BFC233920474

BF7612CM28，40k现货，批次21+

BF7612CM28，BYD，40K，21+

BF862215

BF998，现货销售，只售原装，兴中扬电子

DdatasheetPDF页码索引