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BF998价格
参考价格：￥0.2300
型号：BF998 品牌：SIEMENS 备注：这里有BF998多少钱，2025年最近7天走势，今日出价，今日竞价，BF998批发/采购报价，BF998行情走势销售排行榜，BF998报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BF998 | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC | VishayVishay Siliconix 威世威世科技公司 |   | |
BF998 | Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) Features ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz | SIEMENS 西门子 | | |
BF998 | Silicon N-Channel MOSFET Tetrode Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz | Infineon 英飞凌 | | |
BF998 | RF Manual 16th edition | ETC 知名厂家 | ETC | |
BF998 | Silicon N_Channel MOSFET Tetrode 文件：93.08 Kbytes Page：9 Pages | Infineon 英飞凌 | | |
BF998 | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
BF998 | Silicon N-channel dual-gate MOS-FETs 文件：114.27 Kbytes Page：12 Pages | Philips 飞利浦 | | |
BF998 | 射频 MOSFET 和有源偏置控制器 | Infineon 英飞凌 | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon N-Channel MOSFET Tetrode Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz | Infineon 英飞凌 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon N-Channel MOSFET Tetrode Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz | Infineon 英飞凌 | | ||
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 | SIEMENS 西门子 | | ||
N-channel dual-gate MOS-FET DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES • High forward | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
封装/外壳：TO-253-4，TO-253AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH 12V 30MA SOT143 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
Silicon N_Channel MOSFET Tetrode 文件：93.08 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon N-channel dual-gate 文件：85.28 Kbytes Page：12 Pages | JMNIC 锦美电子 | | ||
Silicon N-channel dual-gate MOS-FETs 文件：85.28 Kbytes Page：12 Pages | JMNIC 锦美电子 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-253-4，TO-253AA 包装：托盘 描述：MOSFET N-CH 12V 200MA SOT-143 分立半导体产品 晶体管 - FET，MOSFET - 射频 | Infineon 英飞凌 | | ||
N-channel dual-gate MOSFET | ETC 知名厂家 | ETC | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon N_Channel MOSFET Tetrode 文件：93.08 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
Silicon N-channel dual-gate MOS-FETs 文件：114.27 Kbytes Page：12 Pages | Philips 飞利浦 | | ||
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) 文件：33.45 Kbytes Page：2 Pages | SIEMENS 西门子 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
N-channel dual-gate MOS-FET | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FET 文件：82.78 Kbytes Page：12 Pages | JMNIC 锦美电子 | | ||
N-channel dual-gate MOS-FET 文件：82.78 Kbytes Page：12 Pages | JMNIC 锦美电子 | | ||
N-channel dual-gate MOS-FET 文件：82.78 Kbytes Page：12 Pages | JMNIC 锦美电子 | | ||
IC intended for use as a PWM controller 文件：30.91 Kbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
BF998产品属性
- 类型
描述
- 型号
BF998
- 制造商
NXP Semiconductors
- 功能描述
MOSFET N RF DUAL-GATE SOT-143
- 制造商
NXP Semiconductors
- 功能描述
MOSFET, N, RF, DUAL-GATE, SOT-143
- 制造商
VISHAY SEMICONDUCTOR
- 功能描述
Trans MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) SOT-143
- 制造商
Infineon Technologies AG
- 功能描述
RF MOSFET N-Channel 12V 0.03A SOT143
- 制造商
NXP Semiconductors
- 功能描述
RF MOSFET N-Ch 12V 30mA Dual Gate SOT143
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
2025+ |
SOT-343 |
5000 |
原装进口价格优 请找坤融电子! |
|||
恩XP |
23+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
恩XP |
24+ |
标准封装 |
9048 |
全新原装正品/价格优惠/质量保障 |
|||
PHI |
23+ |
SOT-143 |
25000 |
主营品牌深圳百分百原装现货假一罚十绝对价优 |
|||
恩XP |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
INFINEON |
23+ |
SOT143 |
2000 |
原装正品公司现货 |
|||
INFINEON |
24+ |
VQFN |
7850 |
只做原装正品现货或订货假一赔十! |
|||
INFINEON/英飞凌 |
23+ |
SOT143 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
恩XP |
24+ |
SOT-143 |
89000 |
全新原装现货,假一罚十 |
|||
Infineon(英飞凌) |
24+ |
SOT-143 |
72048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
BF998规格书下载地址
BF998参数引脚图相关
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DdatasheetPDF页码索引
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