BF998价格

参考价格:¥0.2300

型号:BF998 品牌:SIEMENS 备注:这里有BF998多少钱,2025年最近7天走势,今日出价,今日竞价,BF998批发/采购报价,BF998行情走势销售排行榜,BF998报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BF998

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
BF998

SiliconNChannelMOSFETTetrode(Short-channeltransistorwithhighS/CqualityfactorForlow-noise,gain-controlledinputstagesupto1GHz)

Features ●Short-channeltransistorwithhighS/Cqualityfactor ●Forlow-noise,gain-controlledinputstagesupto1GHz

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

SIEMENS
BF998

SiliconN-ChannelMOSFETTetrode

SiliconN_ChannelMOSFETTetrode •Short-channeltransistorwithhighS/Cqualityfactor •Forlow-noise,gain-controlledinputstageupto1GHz

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
BF998

RFManual16thedition

ETC

知名厂家

BF998

SiliconN_ChannelMOSFETTetrode

文件:93.08 Kbytes Page:9 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
BF998

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

文件:318.61 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
BF998

SiliconN-channeldual-gateMOS-FETs

ETC

知名厂家

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SiliconN-ChannelMOSFETTetrode

SiliconN_ChannelMOSFETTetrode •Short-channeltransistorwithhighS/Cqualityfactor •Forlow-noise,gain-controlledinputstageupto1GHz

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

RFManual16thedition

ETC

知名厂家

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SiliconN-ChannelMOSFETTetrode

SiliconN_ChannelMOSFETTetrode •Short-channeltransistorwithhighS/Cqualityfactor •Forlow-noise,gain-controlledinputstageupto1GHz

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

SiliconN-ChannelMOSFETTetrode(Short-channeltransistorwithhighS/Cqualityfactor)

•Short-channeltransistorwithhighS/Cqualityfactor •Forlownoise,gain-controlledinputstagesupto1GHzReversepinoutversionofBF998

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

SIEMENS

N-channeldual-gateMOS-FET

ETC

知名厂家

RFManual16thedition

ETC

知名厂家

封装/外壳:TO-253-4,TO-253AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:MOSFET N-CH 12V 30MA SOT143 分立半导体产品 晶体管 - FET,MOSFET - 射频

ETC

知名厂家

SiliconN_ChannelMOSFETTetrode

文件:93.08 Kbytes Page:9 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

文件:318.61 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SiliconN-channeldual-gate

文件:85.28 Kbytes Page:12 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconN-channeldual-gateMOS-FETs

文件:85.28 Kbytes Page:12 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

文件:318.61 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

文件:318.61 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

封装/外壳:TO-253-4,TO-253AA 包装:托盘 描述:MOSFET N-CH 12V 200MA SOT-143 分立半导体产品 晶体管 - FET,MOSFET - 射频

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

文件:318.61 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SiliconN_ChannelMOSFETTetrode

文件:93.08 Kbytes Page:9 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

SiliconN-channeldual-gateMOS-FETs

ETC

知名厂家

SiliconN-ChannelMOSFETTetrode(Short-channeltransistorwithhighS/Cqualityfactor)

文件:33.45 Kbytes Page:2 Pages

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

SIEMENS

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

文件:318.61 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

文件:318.61 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

文件:318.61 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

文件:318.61 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

文件:318.61 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

文件:318.61 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

文件:318.61 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

N-channeldual-gateMOS-FET

文件:82.78 Kbytes Page:12 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

N-channeldual-gateMOS-FET

文件:82.78 Kbytes Page:12 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

N-channeldual-gateMOS-FET

文件:82.78 Kbytes Page:12 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

ICintendedforuseasaPWMcontroller

文件:30.91 Kbytes Page:6 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1

BF998产品属性

  • 类型

    描述

  • 型号

    BF998

  • 制造商

    NXP Semiconductors

  • 功能描述

    MOSFET N RF DUAL-GATE SOT-143

  • 制造商

    NXP Semiconductors

  • 功能描述

    MOSFET, N, RF, DUAL-GATE, SOT-143

  • 制造商

    VISHAY SEMICONDUCTOR

  • 功能描述

    Trans MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) SOT-143

  • 制造商

    Infineon Technologies AG

  • 功能描述

    RF MOSFET N-Channel 12V 0.03A SOT143

  • 制造商

    NXP Semiconductors

  • 功能描述

    RF MOSFET N-Ch 12V 30mA Dual Gate SOT143

更新时间:2025-5-18 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NXP(恩智浦)
24+
标准封装
9048
全新原装正品/价格优惠/质量保障
INFINEON
2016+
SOT143
6000
只做原装,假一罚十,公司可开17%增值税发票!
INFINEO
24+
SOT143
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
NXP
24+
SOT-143
89000
全新原装现货,假一罚十
INFINEON/英飞凌
23+
SOT143
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
INFINEON/英飞凌
24+
SOT143
159826
明嘉莱只做原装正品现货
infineon
24+
SOT143
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
infineon
23+
SOT143
999999
原装正品现货量大可订货
VISHAY/威世
24+
SOT-143
1200
只做原厂渠道 可追溯货源
INFINEON
19+
SOT143
66043
原厂代理渠道,每一颗芯片都可追溯原厂;

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