丝印代码：WMO；N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

丝印代码：WMO；N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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N-channel dual-gate MOS-FET

DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES • High forward

Silicon N-channel dual-gate MOS-FETs

文件：114.27 Kbytes Page：12 Pages

Silicon N-channel dual-gate MOS-FETs

文件：114.27 Kbytes Page：12 Pages

Integrated Circuit 1.22V Reference Diode

Description: The NTE998 is a temperature compensated low voltage reference device in a TO92 type package. A single monolithic structure is obtained by utilizing transistors and thin film resistors. Benefits of this construction is low noise, low current, and good long term stability associated wi

3.0 mm Blue Series

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