BF998R价格

参考价格:¥0.2300

型号:BF998R 品牌:INFINEON 备注:这里有BF998R多少钱,2025年最近7天走势,今日出价,今日竞价,BF998R批发/采购报价,BF998R行情走势销售排行榜,BF998R报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BF998R

Silicon N-Channel MOSFET Tetrode

Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz

Infineon

英飞凌

BF998R

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

VishayVishay Siliconix

威世科技

BF998R

RF Manual 16th edition

ETC

知名厂家

BF998R

Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)

文件:33.45 Kbytes Page:2 Pages

SIEMENS

西门子

BF998R

N-channel dual-gate MOSFET

ETC

知名厂家

BF998R

Silicon N_Channel MOSFET Tetrode

文件:93.08 Kbytes Page:9 Pages

Infineon

英飞凌

BF998R

Silicon N-channel dual-gate MOS-FETs

文件:114.27 Kbytes Page:12 Pages

Philips

飞利浦

BF998R

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件:318.61 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Silicon N-Channel MOSFET Tetrode

Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz

Infineon

英飞凌

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

VishayVishay Siliconix

威世科技

Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)

Features ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz

SIEMENS

西门子

Silicon N-channel dual-gate MOS-FETs

文件:114.27 Kbytes Page:12 Pages

Philips

飞利浦

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

VishayVishay Siliconix

威世科技

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

VishayVishay Siliconix

威世科技

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

VishayVishay Siliconix

威世科技

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

VishayVishay Siliconix

威世科技

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

VishayVishay Siliconix

威世科技

封装/外壳:SOT-143R 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:MOSFET N-CH 12V 30MA SOT143 分立半导体产品 晶体管 - FET,MOSFET - 射频

ETC

知名厂家

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件:318.61 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件:318.61 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件:318.61 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件:318.61 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件:318.61 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件:318.61 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

封装/外壳:SOT-143R 包装:带 描述:MOSFET N-CH RF 12V 30MA SOT-143 分立半导体产品 晶体管 - FET,MOSFET - 射频

Infineon

英飞凌

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件:318.61 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

IC intended for use as a PWM controller

文件:30.91 Kbytes Page:6 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

BF998R产品属性

  • 类型

    描述

  • 型号

    BF998R

  • 制造商

    Vishay Semiconductors

  • 功能描述

    MOSFET Transistor, N-Channel, SOT-143R

更新时间:2025-9-23 9:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
25+
SOT143
54648
百分百原装现货 实单必成 欢迎询价
Infineon Technologies
22+
SOT143R4
9000
原厂渠道,现货配单
恩XP
23+
-
9865
原装正品,假一赔十
INFINEON/英飞凌
23+
SOT-143
50000
原装正品 支持实单
恩XP
24+
SOT-143
89000
全新原装现货,假一罚十
24+
SOT-143
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
恩XP
23+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Infineon
SOT-143
68500
一级代理 原装正品假一罚十价格优势长期供货
恩XP
SOT143
3000
原装长期供货!
INFINEON
24+
SOT-143
96000
公司大量原装现货,欢迎来电

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