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BF998R价格
参考价格：￥0.2300
型号：BF998R 品牌：INFINEON 备注：这里有BF998R多少钱，2026年最近7天走势，今日出价，今日竞价，BF998R批发/采购报价，BF998R行情走势销售排行榜，BF998R报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BF998R | 丝印代码：MOR；N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC | VISHAYVishay Siliconix 威世威世科技公司 |   | |
BF998R | 丝印代码：MOR；Silicon N-Channel MOSFET Tetrode Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz | INFINEON 英飞凌 | | |
BF998R | RF Manual 16th edition | ETC 知名厂家 | ETC | |
BF998R | N-channel dual-gate MOSFET | ETC 知名厂家 | ETC | |
BF998R | 丝印代码：MOR；Silicon N_Channel MOSFET Tetrode 文件：93.08 Kbytes Page：9 Pages | INFINEON 英飞凌 | | |
BF998R | Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) 文件：33.45 Kbytes Page：2 Pages | SIEMENS 西门子 | | |
BF998R | 丝印代码：MOR；N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
BF998R | Silicon N-channel dual-gate MOS-FETs 文件：114.27 Kbytes Page：12 Pages | PHILIPS 飞利浦 | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC | VISHAYVishay Siliconix 威世威世科技公司 | | ||
丝印代码：WMO；N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：SOT-143R 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH 12V 30MA SOT143 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：SOT-143R 包装：带 描述：MOSFET N-CH RF 12V 30MA SOT-143 分立半导体产品 晶体管 - FET，MOSFET - 射频 | INFINEON 英飞凌 | | ||
丝印代码：WMO；N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 文件：318.61 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-channel dual-gate MOS-FET DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES • High forward | PHILIPS 飞利浦 | | ||
Silicon N-channel dual-gate MOS-FETs 文件：114.27 Kbytes Page：12 Pages | PHILIPS 飞利浦 | | ||
Integrated Circuit 1.22V Reference Diode Description: The NTE998 is a temperature compensated low voltage reference device in a TO92 type package. A single monolithic structure is obtained by utilizing transistors and thin film resistors. Benefits of this construction is low noise, low current, and good long term stability associated wi | NTE | | ||
3.0 mm Blue Series 文件：29.9 Kbytes Page：1 Pages | PANASONIC 松下 | |
BF998R产品属性
- 类型
描述
- 型号
BF998R
- 制造商
Vishay Semiconductors
- 功能描述
MOSFET Transistor, N-Channel, SOT-143R
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
23+ |
SOT143 |
50000 |
全新原装正品现货,支持订货 |
|||
恩XP |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
恩XP |
23+ |
SOT143 |
3000 |
原装正品假一罚百!可开增票! |
|||
Infineon |
SOT-143 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
NEXPERIA |
25+ |
SOT-143 |
33000 |
原厂原装,价格优势 |
|||
PHI |
25+ |
SOT143R |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
恩XP |
24+ |
标准封装 |
9048 |
全新原装正品/价格优惠/质量保障 |
|||
INFINEON/英飞凌 |
25+ |
SOT143 |
32000 |
INFINEON/英飞凌全新特价BF998RE6327即刻询购立享优惠#长期有货 |
|||
恩XP |
25+ |
- |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
恩XP |
23+ |
SOT-143 |
8002 |
主营品牌深圳百分百原装现货假一罚十绝对价优 |
BF998R规格书下载地址
BF998R参数引脚图相关
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2020-8-5BF998，现货销售，只售原装，兴中扬电子
BF998，现货销售，只售原装，兴中扬电子
2019-11-30
DdatasheetPDF页码索引
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