N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such a

N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such a

Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure)

Silicon N Channel MOSFET Tetrode ● For input stages in UHF TV tuners ● High transconductance ● Low noise figure

N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such a

High-Speed, Micropower, Low-Voltage, SOT23, Rail-to-Rail I/O Comparators

General Description The MAX987/MAX988/MAX991/MAX992/MAX995/MAX996 single/dual/quad micropower comparators feature low-voltage operation and rail-to-rail inputs and outputs. Their operating voltage ranges from +2.5V to +5.5V, making them ideal for both 3V and 5V systems. These comparators also ope