Silicon N-Channel MOSFET Triode

Silicon N-Channel MOSFET Triode
For high-frequency stages up to 300 MHz preferably in FM applications

Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications)

Silicon N-Channel MOSFET Triode
For high-frequency stages up to 300 MHz preferably in FM applications

射频 MOSFET 和有源偏置控制器

硅N沟道MOSFET三极管 • 适用于高达 300 MHz 的高频级，尤其适用于 FM 应用\n• 无铅（符合 RoHS 标准）封装;

Silicon N-Channel MOSFET Triode

文件：62.57 Kbytes Page：6 Pages

Silicon N-Channel MOSFET Triode

文件：62.57 Kbytes Page：6 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：托盘 描述：MOSFET N-CH 20V 30MA SOT-23 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：MOSFET N-CH RF 分立半导体产品 晶体管 - FET，MOSFET - 射频

High Speed Switching Diodes

High Speed Switching Diodes

Integrated Circuit Adjustable Precision Shunt Regulator

Description: The NTE999 is a three–terminal adjustable shunt regulator with guaranteed thermal stability over a temperature range of –0° to +70°C. The output voltage may be set to any value between Vref (approximately 2.5V) and 36V with two external resistors. This device has a typical dynamic ou

Integrared Circuit Programmable Precision Reference

Description: The NTE999M integrated circuit is a three–terminal programmable shunt regulator. This monolithic IC voltage reference operates as a low temperature coefficient zener which is programmable from Vref to 36 volts with two external resistors. This device exhibits a wide operating current

Integrared Circuit Programmable Precision Reference

Description: The NTE999SM integrated circuit is a three–terminal programmable shunt regulator. This monolithic IC voltage reference operates as a low temperature coefficient zener which is programmable from Vref to 36 volts with two external resistors. This device exhibits a wide operating curren