N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • High cross modulation performance • Low noise figure • High AGC-range • Low feedback capacitance • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • Input- and mixer stages especially for

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • High cross modulation performance • Low noise figure • High AGC-range • Low feedback capacitance • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • Input- and mixer stages especially for

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • High cross modulation performance • Low noise figure • High AGC-range • Low feedback capacitance • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • Input- and mixer stages especially for

Silicon N Channel MOSFET Tetrode (For input and mixer stages in FM and VHF TV tuners)

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Integrated Circuit Frequency-to-Voltage Converter

Description: The NTE995 (14–Lead DIP) and NTE995M (8–Lead DIP) are monolithic frequency to voltage converters with a high gain OP amp/comparator designed to operate a relay, lamp, or other load when the input frequency reaches or exceeds a selected rate. The tachometer uses a charge pump techniqu