N-channel dual-gate MOS-FET

DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES • High forward

RF Manual 16th edition

N-channel dual-gate MOS-FET

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N-channel dual-gate MOS-FET

封装/外壳：SC-82A，SOT-343 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH 12V 30MA SOT343R 分立半导体产品 晶体管 - FET，MOSFET - 射频

N-channel dual-gate MOS-FET

文件：82.78 Kbytes Page：12 Pages

N-channel dual-gate MOS-FET

文件：82.78 Kbytes Page：12 Pages

Silicon N-channel dual-gate MOS-FETs

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Silicon N-channel dual-gate MOS-FETs

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Integrated Circuit 1.22V Reference Diode

Description: The NTE998 is a temperature compensated low voltage reference device in a TO92 type package. A single monolithic structure is obtained by utilizing transistors and thin film resistors. Benefits of this construction is low noise, low current, and good long term stability associated wi

3.0 mm Blue Series

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