N-channel dual-gate MOS-FET

DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES • High forward

RF Manual 16th edition

N-channel dual-gate MOS-FET

文件：82.78 Kbytes Page：12 Pages

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)

Features ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz

Silicon N-Channel MOSFET Tetrode

Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz

Silicon N-channel dual-gate MOS-FETs

文件：114.27 Kbytes Page：12 Pages

封装/外壳：SC-82A，SOT-343 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH 12V 30MA SOT343R 分立半导体产品 晶体管 - FET，MOSFET - 射频

N-channel dual-gate MOS-FET

文件：82.78 Kbytes Page：12 Pages

N-channel dual-gate MOS-FET

文件：82.78 Kbytes Page：12 Pages

IC intended for use as a PWM controller

文件：30.91 Kbytes Page：6 Pages