2SJ50价格

参考价格:¥0.5200

型号:2SJ501 品牌:SANYO 备注:这里有2SJ50多少钱,2024年最近7天走势,今日出价,今日竞价,2SJ50批发/采购报价,2SJ50行情走势销售排行榜,2SJ50报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SJ50

LOWFREQUENCYPOWERAMPLIFIER

SILICONP-CHANNELMOSFET LOWFREQUENCYPOWERAMPLIFIER ComplementaryPairwith2SK133,2SK134,2SK135

HitachiHitachi, Ltd.

日立公司

Hitachi

Ultrahigh-SpeedSwitchingApplications

Ultrahigh-SpeedSwitchingApplications Features ·LowON-resistance. ·Ultrahigh-speedswitching. ·2.5Vdrive.

SANYOSanyo

三洋三洋电机株式会社

SANYO

Ultrahigh-SpeedSwitchingApplications

Ultrahigh-SpeedSwitchingApplications Features ·LowON-resistance. ·Ultrahigh-speedswitching. ·4Vdrive.

SANYOSanyo

三洋三洋电机株式会社

SANYO

DC/DCConverterApplications

DC/DCConverterApplications Features ·LowONresistance. ·Ultrahigh-speedswitching. ·4Vdrive.

SANYOSanyo

三洋三洋电机株式会社

SANYO

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=0.042Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistanceRDS(on)=0.042Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=0.042Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistanceRDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconPChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistanceRDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistanceRDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistanceRDS(on)=0.065Ωtyp.(atVGS=–10V,ID=–5A) •Lowdrivecurrent •Highspeedswitching •4Vgatedrivedevices.

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconPChannelMOSFET

*Lowon-resistance RDS(on)=0.065Ωtyp.(atV GS=–10V,ID=–5A) *Lowdrivecurrent *Highspeedswitching *4Vgatedrivedevices.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFET

*Lowon-resistance RDS(on)=0.065Ωtyp.(atV GS=–10V,ID=–5A) *Lowdrivecurrent *Highspeedswitching *4Vgatedrivedevices.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistanceRDS(on)=0.065Ωtyp.(atVGS=–10V,ID=–5A) •Lowdrivecurrent •Highspeedswitching •4Vgatedrivedevices.

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconPChannelMOSFET

*Lowon-resistance RDS(on)=0.065Ωtyp.(atV GS=–10V,ID=–5A) *Lowdrivecurrent *Highspeedswitching *4Vgatedrivedevices.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HightSpeedPowerSwitching

Features Lowon-resistance RDS(on)=0.065typ.(atVGS=-10V,ID=-5A) Lowdrivecurrent Highspeedswitching 4Vgatedrivedevices.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SiliconPChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistanceRDS(on)=0.065Ωtyp.(atVGS=–10V,ID=–5A) •Lowdrivecurrent •Highspeedswitching •4Vgatedrivedevices.

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconPChannelMOSFET

*Lowon-resistance RDS(on)=0.065Ωtyp.(atV GS=–10V,ID=–5A) *Lowdrivecurrent *Highspeedswitching *4Vgatedrivedevices.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFET

*Lowon-resistance RDS(on)=0.065Ωtyp.(atV GS=–10V,ID=–5A) *Lowdrivecurrent *Highspeedswitching *4Vgatedrivedevices.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

PCHANNELMOSTYPE(HIGHSPEED,HIGHCURRENTSWITCHING,CHOPPERREGULATOR,DC-DCCONVERTERANDMOTORDRIVEAPPLICATOINS)

ChopperRegulator,DC−DCConverterandMotorDriveApplications 4Vgatedrive Lowdrain−sourceONresistance:RDS(ON)=0.5Ω(typ.) Highforwardtransferadmittance:|Yfs|=1.0S(typ.) Lowleakagecurrent:IDSS=−100µA(max)(VDS=−60V) Enhancement−mode:Vth=−0.8~

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

PCHANNELMOSTYPE(HIGHSPEED,HIGHCURRENTSWITCHING,CHOPPERREGULATOR,DC-DCCONVERTERANDMOTORDRIVEAPPLICATIONS)

ChopperRegulator,DC−DCConverterandMotorDriveApplications 4Vgatedrive Lowdrain−sourceONresistance:RDS(ON)=1.35Ω(typ.) Highforwardtransferadmittance:|Yfs|=0.7S(typ.) Lowleakagecurrent:IDSS=−100µA(VDS=−100V) Enhancement−mode:Vth=−0.8~−2.0

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

PCHANNELMOSTYPE(HIGHSPEED,HIGHCURRENTSWITCHING,CHOPPERREGULATOR,DC-DCCONERTORANDMOTORDRIVEAPPLICATIONS)

ChopperRegulator,DC−DCConverterandMotorDriveApplications 4Vgatedrive Lowdrain−sourceONresistance:RDS(ON)=1.35Ω(typ.) Highforwardtransferadmittance:|Yfs|=0.7S(typ.) Lowleakagecurrent:IDSS=−100µA(max)(VDS=−100V) Enhancement−mode:Vth=−0.

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconPChannelMOSFET

文件:108.55 Kbytes Page:10 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFET

文件:117.47 Kbytes Page:11 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFET

文件:108.68 Kbytes Page:10 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

P-ChannelMOSFET

文件:1.27354 Mbytes Page:4 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

P-Channel30-V(D-S)MOSFET

文件:1.01578 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

ChopperRegulator,DC−DCConverterandMotorDriveApplications

文件:157.32 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

ChopperRegulator,DC−DCConverterandMotorDriveApplications

文件:157.32 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

ChopperRegulator,DC−DCConverterandMotorDriveApplications

文件:224.22 Kbytes Page:6 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

ChopperRegulator,DC?묭CConverterandMotorDrive

文件:220.67 Kbytes Page:6 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

ChopperRegulator,DC−DCConverterandMotorDriveApplications

文件:224.22 Kbytes Page:6 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

ChopperRegulator,DC?묭CConverterandMotorDrive

文件:220.67 Kbytes Page:6 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

ChopperRegulator,DC?묭CConverterandMotorDrive

文件:161.08 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

ChopperRegulator,DC−DCConverterandMotorDriveApplications

文件:157.98 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

ChopperRegulator,DC−DCConverterandMotorDriveApplications

文件:157.98 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

ChopperRegulator,DC?묭CConverterandMotorDrive

文件:161.08 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SJ50产品属性

  • 类型

    描述

  • 型号

    2SJ50

  • 制造商

    Renesas Electronics

  • 功能描述

    Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) TO-220FM Box Tray

  • 制造商

    Renesas

  • 功能描述

    Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) TO-220FM Box

更新时间:2024-4-19 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
23+
04+
20000
全新原装假一赔十
SANYO
2020+
SOT-23
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
TOSHIBA
SOT89
04+
2600
全新原装进口自己库存优势
RENESAS/瑞萨
22+
SOT252
100000
代理渠道/只做原装/可含税
RENESA
23+
NA/
3371
原装现货,当天可交货,原型号开票
RENESAS
20+
TO-220F
36900
原装优势主营型号-可开原型号增税票
TOS
01+
SOT89
415
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VISHAY
1436+
TO-92
30000
绝对原装进口现货可开增值税发票
RENESAS
2018+
TO-263
11256
只做进口原装正品!假一赔十!
三年内
1983
纳立只做原装正品13590203865

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