2SJ506价格
参考价格：￥0.8450
型号：2SJ506STR 品牌：HITACHI 备注：这里有2SJ506多少钱，2026年最近7天走势，今日出价，今日竞价，2SJ506批发/采购报价，2SJ506行情走势销售排行榜，2SJ506报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ506 | Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.065 Ωtyp. (at VGS = –10V, ID= –5A) • Low drive current • High speed switching • 4V gate drive devices. | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SJ506 | Silicon P Channel MOS FET * Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices. | RENESAS 瑞萨 | | |
2SJ506 | Silicon P Channel MOS FET High Speed Power Switching • Low on-resistance RDS(on)= 0.065 Ωtyp. (at VGS = –10V, ID= –5A)\n• Low drive current\n• High speed switching\n• 4V gate drive devices.; | HITACHIHitachi Semiconductor 日立日立公司 | | |
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.065 Ωtyp. (at VGS = –10V, ID= –5A) • Low drive current • High speed switching • 4V gate drive devices. | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET * Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET * Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.065 Ωtyp. (at VGS = –10V, ID= –5A) • Low drive current • High speed switching • 4V gate drive devices. | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET * Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices. | RENESAS 瑞萨 | | ||
Hight Speed Power Switching Features Low on-resistance RDS(on)= 0.065 typ. (at VGS= -10V, ID=-5A) Low drive current High speed switching 4V gate drive devices. | KEXIN 科信电子 | | ||
Silicon P Channel MOS FET * Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices. | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET 文件：108.68 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
P-Channel MOSFET 文件：1.27354 Mbytes Page：4 Pages | KEXIN 科信电子 | | ||
P-Channel 30-V (D-S) MOSFET 文件：1.01578 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | |
2SJ506产品属性
- 类型
描述
- 封装类型：
DPAK(L)-(2)/TO-251
- Nch/Pch：
Pch
- 通道数：
Single
- VDSS (V) 最大值：
-30
- ID (A)：
-10
- RDS (ON)(mΩ) 最大值@4V或4.5V：
180
- RDS (ON)(mΩ) 最大值@10V或8V：
85
- Ciss (pF) 典型值：
630
- Vgs (off) (V) 最大值：
-2
- VGSS (V)：
20
- Pch (W)：
20
- 应用：
Industrial
- 安装类型：
Through Hole
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
2511 |
TO252 |
3000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
NEC |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
日立 |
24+ |
TO-251 |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
VBsemi |
25+ |
TO251 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
RENESAS/瑞萨 |
23+ |
SOT252 |
51395 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
RENESAS/瑞萨 |
25+ |
TO-252 |
32360 |
RENESAS/瑞萨全新特价2SJ506STR-E即刻询购立享优惠#长期有货 |
|||
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
||||
RENESAS/瑞萨 |
2447 |
SOT252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
RENESAS |
最新 |
SOT252 |
3000 |
绝对进口原装现货 |
|||
HITACHI/日立 |
23+ |
SOT252 |
8000 |
只做原装现货 |
2SJ506规格书下载地址
2SJ506参数引脚图相关
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DdatasheetPDF页码索引
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