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2SJ506价格
参考价格：￥0.8450
型号：2SJ506STR 品牌：HITACHI 备注：这里有2SJ506多少钱，2026年最近7天走势，今日出价，今日竞价，2SJ506批发/采购报价，2SJ506行情走势销售排行榜，2SJ506报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ506 | Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.065 Ωtyp. (at VGS = –10V, ID= –5A) • Low drive current • High speed switching • 4V gate drive devices. | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SJ506 | Silicon P Channel MOS FET * Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices. | RENESAS 瑞萨 | | |
2SJ506 | Silicon P Channel MOS FET High Speed Power Switching | HITACHIHitachi Semiconductor 日立日立公司 | | |
Silicon P Channel MOS FET * Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.065 Ωtyp. (at VGS = –10V, ID= –5A) • Low drive current • High speed switching • 4V gate drive devices. | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET * Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET * Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices. | RENESAS 瑞萨 | | ||
Hight Speed Power Switching Features Low on-resistance RDS(on)= 0.065 typ. (at VGS= -10V, ID=-5A) Low drive current High speed switching 4V gate drive devices. | KEXIN 科信电子 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.065 Ωtyp. (at VGS = –10V, ID= –5A) • Low drive current • High speed switching • 4V gate drive devices. | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET * Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices. | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET 文件：108.68 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
P-Channel MOSFET 文件：1.27354 Mbytes Page：4 Pages | KEXIN 科信电子 | | ||
P-Channel 30-V (D-S) MOSFET 文件：1.01578 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | |
2SJ506产品属性
- 类型
描述
- 型号
2SJ506
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon P Channel MOS FET High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
RENESAS |
2511 |
TO252 |
3000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
VBsemi |
24+ |
TO251 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
RENESAS/瑞萨 |
23+ |
SOT252 |
51395 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
||||
RENESAS |
1922+ |
SOT252 |
3000 |
绝对进口原装现货 |
|||
RENESAS/瑞萨 |
23+ |
SOT252 |
50000 |
全新原装正品现货,支持订货 |
|||
RENESAS/瑞萨 |
2447 |
SOT252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
RENESAS瑞萨/HITACHI日立 |
24+ |
TO-252 |
27700 |
新进库存/原装 |
|||
SI |
25+ |
TO-92-2 |
860000 |
明嘉莱只做原装正品现货 |
2SJ506规格书下载地址
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2019-10-30
DdatasheetPDF页码索引
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