型号 功能描述 生产厂家 企业 LOGO 操作
2SJ505STL-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

文件:117.47 Kbytes Page:11 Pages

RENESAS

瑞萨

2SJ505STL-E产品属性

  • 类型

    描述

  • 型号

    2SJ505STL-E

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon P Channel MOS FET

更新时间:2026-1-28 13:49:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESA
25+
TO263
9800
全新原装现货,假一赔十
RENESAS/瑞萨
24+
TO-263
3580
原装现货/15年行业经验欢迎询价
RENESAS/瑞萨
24+
TO-263
47186
郑重承诺只做原装进口现货
RENESAS/瑞萨
20+
TO-263
381
进口原装现货,假一赔十
RENESAS/瑞萨
23+
TO-263
381
全新原装正品现货,支持订货
RENESAS/瑞萨
2511
TO-263
381
电子元器件采购降本30%!原厂直采,砍掉中间差价
RENESA
23+
TO263
50000
全新原装正品现货,支持订货
RENESAS
25+23+
TO-263
14113
绝对原装正品全新进口深圳现货
Renesas(瑞萨)
23+
原厂封装
32078
10年以上分销商,原装进口件,服务型企业
RENESAS
22+
TO-263
6000
十年配单,只做原装

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