型号 功能描述 生产厂家 企业 LOGO 操作
2SJ505L-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

2SJ505L-E产品属性

  • 类型

    描述

  • 型号

    2SJ505L-E

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    Trans MOSFET P-CH 60V 50A 3-Pin(3+Tab) LDPAK(L) Box

更新时间:2026-3-17 8:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
24+
TO-263
47186
郑重承诺只做原装进口现货
RENESAS/瑞萨
2023+
TO-263
8800
正品渠道现货 终端可提供BOM表配单。
RENESAS
20+
TO-263
36900
原装优势主营型号-可开原型号增税票
RENESAS/瑞萨
2007+
TO-263
86
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESA
25+
TO263
9800
全新原装现货,假一赔十
Renesas(瑞萨)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
RENESAS
25+23+
TO-263
14113
绝对原装正品全新进口深圳现货
VBSEMI/微碧半导体
24+
TO263
7800
全新原厂原装正品现货,低价出售,实单可谈
RENESAS
24+
SOT252
97000
RENESAS/瑞萨
22+
TO-263
20000
公司只有原装 品质保证

2SJ505L-E数据表相关新闻