型号 功能描述 生产厂家 企业 LOGO 操作
2SJ505L-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

文件:117.47 Kbytes Page:11 Pages

RENESAS

瑞萨

2SJ505L-E产品属性

  • 类型

    描述

  • 型号

    2SJ505L-E

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    Trans MOSFET P-CH 60V 50A 3-Pin(3+Tab) LDPAK(L) Box

更新时间:2026-1-28 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
2511
TO-263
381
电子元器件采购降本30%!原厂直采,砍掉中间差价
NEC
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
SI
23+
TO-92-2
4000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
1415+
TO-252
28500
全新原装正品,优势热卖
RENESAS/瑞萨
20+
TO-263
32500
现货很近!原厂很远!只做原装
RENESAS/瑞萨
23+
TO-263
50000
全新原装正品现货,支持订货
RENESAS
25+23+
TO-263
14113
绝对原装正品全新进口深圳现货
RENESAS
24+
SOT252
97000
Renesas(瑞萨)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
RENESA
25+
TO263
9800
全新原装现货,假一赔十

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