型号 功能描述 生产厂家 企业 LOGO 操作
2SJ504-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HITACHIHitachi Semiconductor

日立日立公司

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -20A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.055Ω(Max)@VGS= -10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

2SJ504-E产品属性

  • 类型

    描述

  • 型号

    2SJ504-E

  • 制造商

    Renesas Electronics

  • 功能描述

    Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) TO-220FM Box Tray

  • 制造商

    Renesas

  • 功能描述

    Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) TO-220FM Box

更新时间:2026-1-28 11:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
T
23+
TO
8000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
HITACHI/日立
2450+
TO-263
9485
只做原装正品现货或订货假一赔十!
RENESAS/瑞萨
2447
TO-220F
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
RENESAS/瑞萨
23+
TO-220F
50000
全新原装正品现货,支持订货
HIT
24+
TO-251
20000
RENESAS
23+
NA
1206
专做原装正品,假一罚百!
HITACHI/日立
25+
TO-263
9800
全新原装现货,假一赔十
HITACHI
24+
TO-263
5000
只做原装公司现货
RENESAS/瑞萨
24+
TO-220F
9600
原装现货,优势供应,支持实单!
HAT
25+
TO-263
1000
现货

2SJ504-E数据表相关新闻