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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ506L-E | Silicon P Channel MOS FET * Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices. | RENESAS 瑞萨 |   | |
Silicon P Channel MOS FET * Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.065 Ωtyp. (at VGS = –10V, ID= –5A) • Low drive current • High speed switching • 4V gate drive devices. | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.065 Ωtyp. (at VGS = –10V, ID= –5A) • Low drive current • High speed switching • 4V gate drive devices. | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET * Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：108.68 Kbytes Page：10 Pages | RENESAS 瑞萨 | |
2SJ506L-E产品属性
- 类型
描述
- 型号
2SJ506L-E
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon P Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
RenesasElectronicsCorpor |
23+ |
NA |
1286 |
专做原装正品,假一罚百! |
|||
HIT |
24+ |
SOT252 |
4231 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
NEC |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
RENESAS瑞萨/HITACHI日立 |
24+ |
TO-252 |
27700 |
新进库存/原装 |
|||
VBsemi |
24+ |
TO252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
|||
RENESAS/瑞萨 |
20+ |
TO-252 |
32500 |
现货很近!原厂很远!只做原装 |
|||
VBsemi/台湾微碧 |
22+ |
TO-252 |
20000 |
公司只有原装 品质保证 |
|||
RENESAS/瑞萨 |
2447 |
SOT252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
2SJ506L-E规格书下载地址
2SJ506L-E参数引脚图相关
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2019-10-30
DdatasheetPDF页码索引
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