位置：首页 > IC中文资料 > 2SJ505(L)_15
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ505(L)_15 | Silicon P Channel MOS FET 文件：117.47 Kbytes Page：11 Pages | RENESAS 瑞萨 |   | |
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HITACHIHitachi Semiconductor 日立日立公司 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS |
25+23+ |
TO-263 |
14113 |
绝对原装正品全新进口深圳现货 |
|||
RENESAS |
23+ |
NA |
1206 |
专做原装正品,假一罚百! |
|||
RENESAS |
03+ |
TO-263 |
875 |
||||
RENESAS |
17+ |
TO-263 |
6200 |
100%原装正品现货 |
|||
NEC |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
HITACHI/日立 |
2450+ |
TO263 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
RENESAS |
22+ |
TO-363 |
20000 |
公司只有原装 品质保证 |
|||
RENESAS |
20+ |
TO-263 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
2SJ505(L)_15芯片相关品牌
2SJ505(L)_15规格书下载地址
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2SJ505(L)_15数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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