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型号 功能描述 生产厂家 企业 LOGO 操作
2SJ506L

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 0.065 Ωtyp. (at VGS = –10V, ID= –5A) • Low drive current • High speed switching • 4V gate drive devices.

HITACHIHitachi Semiconductor

日立日立公司

2SJ506L

Silicon P Channel MOS FET

* Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices.

RENESAS

瑞萨

2SJ506L

Power MOSFETs

RENESAS

瑞萨

Silicon P Channel MOS FET

* Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 0.065 Ωtyp. (at VGS = –10V, ID= –5A) • Low drive current • High speed switching • 4V gate drive devices.

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

* Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices.

RENESAS

瑞萨

Silicon P Channel MOS FET

* Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices.

RENESAS

瑞萨

2SJ506L产品属性

  • 类型

    描述

  • 型号

    2SJ506L

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon P Channel MOS FET

更新时间:2026-3-17 19:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VBsemi
21+
TO251
10026
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS
20+
TO-251
38900
原装优势主营型号-可开原型号增税票
RENESAS
26+
TO-252
360000
进口原装现货
RenesasElectronicsCorpor
23+
NA
1286
专做原装正品,假一罚百!
VBsemi
25+
TO251
9000
只做原装正品 有挂有货 假一赔十
NEC
26+
ZIP
86720
全新原装正品价格最实惠 假一赔百
NEC
23+
TO-251
45416
原厂授权代理,海外优势订货渠道。可提供大量库存,详
RENESAS
22+
TO-252
20000
公司只有原装 品质保证
RENESAS
25+
TO-252
8800
公司只做原装,详情请咨询
RENESAS
24+
TO-252
16900
原装正品现货支持实单

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