位置：首页 > IC中文资料第6002页 > 2SJ506L
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ506L | Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.065 Ωtyp. (at VGS = –10V, ID= –5A) • Low drive current • High speed switching • 4V gate drive devices. | HitachiHitachi Semiconductor 日立日立公司 |   | |
2SJ506L | Silicon P Channel MOS FET * Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices. | RENESAS 瑞萨 | | |
2SJ506L | Power MOSFETs | RENESAS 瑞萨 | | |
Silicon P Channel MOS FET * Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.065 Ωtyp. (at VGS = –10V, ID= –5A) • Low drive current • High speed switching • 4V gate drive devices. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET * Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：108.68 Kbytes Page：10 Pages | RENESAS 瑞萨 | |
2SJ506L产品属性
- 类型
描述
- 型号
2SJ506L
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon P Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi |
24+ |
TO251 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
RENESAS |
24+ |
TO-252 |
16900 |
原装正品现货支持实单 |
|||
RENESAS瑞萨/HITACHI日立 |
24+ |
TO-252 |
27700 |
新进库存/原装 |
|||
RENESAS |
20+ |
TO-251 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
VBsemi |
21+ |
TO251 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
NEC |
2022+ |
12888 |
原厂代理 终端免费提供样品 |
||||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
|||
RENESAS |
23+ |
TO-252 |
31035 |
全新原装正品现货,支持订货 |
|||
RENESAS |
2511 |
TO-252 |
31035 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
2SJ506L规格书下载地址
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2019-10-30
DdatasheetPDF页码索引
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