N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N6660 and 2N6661 are enhancement mode (normally-off) transistors that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors,

TMOS SWITCHING FET TRANSISTORS

N-Channel 60-V

FEATURES • Military Qualified • Low On-Resistence: 1.3  • Low Threshold: 1.7 V • Low Input Capacitance: 35 pF • Fast Switching Speed: 8 ns • Low Input and Output Leakage BENEFITS • Guaranteed Reliability • Low Offset Voltage • Low-Voltage Operation • Easily Driven Without Buffer • Hig

TMOS SWITCHING TRANSISTOR

N-Channel, Enhancement-Mode, Vertical DMOS FET

Description 2N6661 is an enhancement-mode (normally-off) tran istor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process. This comination produces a device with the power-handling capabilities of bipolar transistors, and the high input impedance and positive

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

2N6661 • VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω • Fast Switching • Low Threshold Voltage (Logic Level) • Low CISS • Integral Source-Drain Body Diode • Hermetic Metal TO39 Package • High Reliability Screening Options Available

TMOS SWITCHING TRANSISTOR

TMOS SWITCHING FET TRANSISTORS

N-Channel 80-V and 90-V (D-S) MOSFETS

FEATURES ● Low On-Resistance: 3.6 Ω ● Low Threshold: 1.6 V ● Low Input Capacitance: 35 pF ● Fast Switching Speed: 6 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N6660 and 2N6661 are enhancement mode (normally-off) transistors that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors,

N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

FEATURES • Switching Regulators • Converters • Motor Drivers

N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION This enhancement-mode (normally-off) vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. High Reliability Screening options are a

DUAL N?밅HANNEL ENHANCEMENT MODE

DESCRIPTION These Dual enhancement-mode (normally-off) vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. High Reliability Screening optio

POWER TRANSISTORS(65W)

8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS PNP SILICON 40-80 VOLTS 65 WATTS

PLASTIC MEDIUM-POWER SILICON TRANSISTORS

PLASTIC MEDIUM-POWER SILICON TRANSISTORS 8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS PNP SILICON 40-80 VOLTS 65 WATTS

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

POWER TRANSISTORS(65W)

8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS PNP SILICON 40-80 VOLTS 65 WATTS

DARLINGTON POWER TRANSISTORS(PNP SILICON )

Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − hFE = 3500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 200 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6667

PLASTIC MEDIUM-POWER SILICON TRANSISTORS

PLASTIC MEDIUM-POWER SILICON TRANSISTORS 8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS PNP SILICON 40-80 VOLTS 65 WATTS

Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60??0 V, 65 W

Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − hFE = 3500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 200 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6667 = 80

PNP DARLINGTON TRANSISTOR

Description: PNP Darlington Transistor

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= -5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -5A • Complement to Type 2N6387 APPLICATIONS • Designed for general purpose amplifier and l

Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60??0 V, 65 W

Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − hFE = 3500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 200 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6667 = 80

Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60??0 V, 65 W

Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − hFE = 3500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 200 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6667 = 80

Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60??0 V, 65 W

Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − hFE = 3500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 200 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6667 = 80

Darlington Power Transistor

[multicomp] 10 Ampere Darlington Power Transistors PNP Silicon 80 Volts 65 Watts Plastic Medium-Power Silicon Transistors are designed for general-purpose amplifier and low speed switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO(sus) = 80V (Minim

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

PLASTIC MEDIUM-POWER SILICON TRANSISTORS

PLASTIC MEDIUM-POWER SILICON TRANSISTORS 8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS PNP SILICON 40-80 VOLTS 65 WATTS

DARLINGTON POWER TRANSISTORS(PNP SILICON )

Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − hFE = 3500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 200 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6667

SILICON PNP POWER DARLINGTON TRANSISTOR

SILICON PNP POWER DARLINGTON TRANSISTOR ■ SGS-THOMSON PREFERRED SALESTYPE ■ PNP DARLINGTON ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: ■ GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER

POWER TRANSISTORS(65W)

8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS PNP SILICON 40-80 VOLTS 65 WATTS

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -5A ·Complement to Type 2N6388 APPLICATIONS ·Designed for gener

Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60??0 V, 65 W

Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − hFE = 3500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 200 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6667 = 80

N-Channel Enhancement-Mode Vertical DMOS FETs

文件：395.58 Kbytes Page：3 Pages

MOSFETs and JFETs

N-Channel Enhancement Mode Power MOSFET

文件：541.05 Kbytes Page：3 Pages

N-Channel, Enhancement-Mode, Vertical DMOS FET

文件：313.7 Kbytes Page：10 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：93.33 Kbytes Page：3 Pages

N-Channel 60 V (D-S) MOSFET

文件：130.19 Kbytes Page：6 Pages

N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET

N-Channel Enhancement-Mode Vertical DMOS FETs

文件：395.58 Kbytes Page：3 Pages

N-Channel 60 V (D-S) MOSFET

文件：130.19 Kbytes Page：6 Pages

N-Channel 60 V (D-S) MOSFET

文件：130.19 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：241.56 Kbytes Page：4 Pages

N?밅HANNEL ENHANCEMENT MODE MOSFET

文件：135.54 Kbytes Page：2 Pages

N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

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N?밅HANNEL ENHANCEMENT MODE MOSFET

文件：135.54 Kbytes Page：2 Pages

N-Channel 60 V (D-S) MOSFET

文件：130.19 Kbytes Page：6 Pages

N-Channel 60 V (D-S) MOSFET

文件：130.19 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

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N-Channel Enhancement-Mode Vertical DMOS FETs

文件：395.58 Kbytes Page：3 Pages

N-Channel 90 V (D-S) MOSFET

文件：130.4 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：82.73 Kbytes Page：3 Pages

N-Channel 90 V (D-S) MOSFET

文件：130.4 Kbytes Page：6 Pages

N-Channel 90 V (D-S) MOSFET

文件：130.4 Kbytes Page：6 Pages

N-Channel 90 V (D-S) MOSFET

文件：130.4 Kbytes Page：6 Pages

N-Channel 90 V (D-S) MOSFET

文件：130.4 Kbytes Page：6 Pages