DUAL N?밅HANNEL ENHANCEMENT MODE

DESCRIPTION These Dual enhancement-mode (normally-off) vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. High Reliability Screening optio

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N6660 and 2N6661 are enhancement mode (normally-off) transistors that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors,

N-Channel 80-V and 90-V (D-S) MOSFETS

FEATURES ● Low On-Resistance: 3.6 Ω ● Low Threshold: 1.6 V ● Low Input Capacitance: 35 pF ● Fast Switching Speed: 6 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

TMOS SWITCHING FET TRANSISTORS

N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

FEATURES • Switching Regulators • Converters • Motor Drivers

N-Channel Enhancement-Mode Vertical DMOS FETs

文件：395.58 Kbytes Page：3 Pages